Retraction: “Atomistic simulation of damage accumulation and amorphization in Ge” [J. Appl. Phys. 117, 055703 (2015)] von Gomez-Selles, Jose L., Claverie, Alain, Sklenard, Benoit, Benistant, Francis, Martin-Bragado, Ignacio

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Atomistic simulation of damage accumulation and amorphization in Ge von Gomez-Selles, Jose L., Claverie, Alain, Sklenard, Benoit, Benistant, Francis, Martin-Bragado, Ignacio

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Extraction of parasitic and channel resistance components in FinFETs using TCAD tools von Narayanan, Sudarshan, Banghart, Edmund, Zeitzoff, Peter, Korablev, Konstantin, Pandey, Shesh Mani, Gendron-Hansen, Amaury, Benistant, Francis

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Optimization and Benchmarking FinFETs and GAA Nanosheet Architectures at 3-nm Technology Node: Impact of Unique Boosters von Bhuwalka, Krishna K., Wu, Hao, Zhao, Wenbo, Rzepa, Gerhard, Baumgartner, Oskar, Benistant, Francis, Chen, Yijian, Liu, Changze

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Dopant–dopant interactions in beryllium doped indium gallium arsenide: An ab initio study von Kulish, Vadym, Liu, Wenyuan, Benistant, Francis, Manzhos, Sergei

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Efficient and accurate atomistic modeling of dopant migration using deep neural network von Ding, Xi, Tao, Ming, Li, Junhua, Li, Mingyuan, Shi, Mengchao, Chen, Jiashu, Tang, Zhen, Benistant, Francis, Liu, Jie

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Grown-in beryllium diffusion in indium gallium arsenide: An ab initio, continuum theory and kinetic Monte Carlo study von Liu, Wenyuan, Sk, Mahasin Alam, Manzhos, Sergei, Martin-Bragado, Ignacio, Benistant, Francis, Cheong, Siew Ann

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Analytical compact modeling and statistical variability study of LDMOS von Zhou, Hongtao, Zhou, Xing, Benistant, Francis

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Analytical compact modeling and statistical variability study of LDMOS : RELIABILITY AND VARIABILITY OF DEVICES FOR CIRCUITS AND SYSTEMS von HONGTAO ZHOU, XING ZHOU, BENISTANT, Francis

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First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance von Dixit, Hemant, Chengyu Niu, Raymond, Mark, Kamineni, Vimal, Pandey, Rajan K., Konar, Anirudhha, Fronheiser, Jody, Carr, Adra V., Oldiges, Phil, Adusumilli, Praneet, Lanzillo, Nicholas A., Xin Miao, Sahu, Bhagawan, Benistant, Francis

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Grown-in Beryllium Diffusion in Indium Gallium Arsenide: An ab initio, Continuum Theory and Kinetic Monte Carlo Study von Manzhos, Sergei, Liu, Wenyan, Sk, Mahasin Alam, Martin-Bragado, Ignacio, Benistant, Francis, Cheong, Siew Ann

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Investigation of Embedded SiGe Source/Drain for 28nm HKMG PFET Performance Enhancement von Bazizi, El Mehdi, Zaka, Alban, Dilliway, Gabriela, Bai, Bo, Wiatr, Maciej, Benistant, Francis, Horstmann, Manfred

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MEMORY, GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR, AND PRODUCING METHOD von BENISTANT, Francis Lionel, HOU, Zhaozhao, FAN, Luming, LIU, Yanxiang, XU, Jeffrey Junhao

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Memory, Gate-All-Around Field-Effect Transistor, and Manufacturing Method von Liu, Yanxiang, Benistant, Francis Lionel, Xu, Jeffrey Junhao, Hou, Zhaozhao, Fan, Luming

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MEMORY, GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR, AND PRODUCING METHOD von BENISTANT, Francis Lionel, HOU, Zhaozhao, FAN, Luming, LIU, Yanxiang, XU, Jeffrey Junhao

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SDODEL MOSFET for performance enhancement von King Jien Chui, Samudra, G.S., Yee-Chia Yeo, Kheng-Chok Tee, Leong, K.-W., Kian Meng Tee, Benistant, F., Lap Chan

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Dopant-Dopant Interactions in Beryllium doped Indium Gallium Arsenide: an Ab Initio Study von Kulish, Vadym, Liu, Wenyuan, Benistant, Francis, Manzhos, Sergei

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GATE-ALL-AROUND TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE von HOU, Zhaozhao, BENISTANT, Francis Lionel, WANG, Weilin

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System and method for modular simulation of spin transfer torque magnetic random access memory devices von Benistant, Francis, Sahu, Bhagawan, Datta, Deepanjan

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Multiple-step epitaxial growth S/D regions for NMOS FinFET von Benistant, Francis, Li, Zhiqing, Pandey, Shesh Mani

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