Quenching of the Hall effect in a one-dimensional wire von ROUKES, M. L, SCHERER, A, ALLEN, S. J. JR, CRAIGHEAD, H. G, RUTHEN, R. M, BEEBE, E. D, HARBISON, J. P

Volltext

Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage von SCHERER, A, ROUKES, M. L, CRAIGHEAD, H. G, RUTHEN, R. M, BEEBE, E. D, HARBISON, J. P

Volltext

Beryllium implantation doping of InGaAs von TELL, B, LEHENY, R. F, LIAO, A. S. H, BRIDGES, T. J, BURKHARDT, E. G, CHANG, T. Y, BEEBE, E. D

Volltext

Channeled substrate buried heterostructure InGaAsP/InP laser employing a buried Fe ion implant for current confinement von WILT, D. P, SCHWARTZ, B, TELL, B, BEEBE, E. D, NELSON, R. J

Volltext

Subnanosecond pulsed laser annealing of Se-implanted InP von TELL, B, BJORKHOLM, J. E, BEEBE, E. D

Volltext

1.5 μm InGaAsP/InP vertically coupled semiconductor optical pre-amplifier von LEE, H. P, SCHERER, A, HONG, W. P, ZAH, C. E, ORENSTEIN, M, BHAT, R, BEEBE, E. D, ANDREADAKIS, N, KOZA, M. A

Volltext

Liquid Phase Epitaxy of AlyGa1-yAs1-xSbx and the Importance of Strain Effects Near the Miscibility Gap von Nahory, R E, Pollack, M A, Beebe, E D, DeWinter, J C, Ilegems, M

Volltext

The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility Gap von Nahory, R. E., Pollack, M. A., Beebe, E. D., DeWinter, J. C., Ilegems, M.

Volltext

TA-B1 tunable-bandgap InGaAsP avalanche photodiode detectors von Washington, M.A., Nahory, R.E., Pollack, M.A., Beebe, E.D., Capasso, F.

Volltext

An In0.53Ga0.47As junction field-effect transistor von Leheny, R.F., Nahory, R.E., Pollack, M.A., Ballman, A.A., Beebe, E.D., DeWinter, J.C., Martin, R.J.

Volltext

Be-implanted In0.53Ga0.47As diodes with ideal forward current-voltage characteristics von Zemel, A., Tell, B., Leheny, R. F., Harrison, T., Bridges, T. J., Burkhardt, E. G., Liao, A. S. H., Beebe, E. D.

Volltext

Be-implanted In0.53Ga0.47 As diodes with ideal forward current-voltage characteristics von ZEMEL, A, TELL, B, LEHENY, R. F, HARRISON, T, BRIDGES, T. J, BURKHARDT, E. G, LIAO, H, BEEBE, E. D

Volltext

Antibodies to insulin-like growth factor i receptor von COHEN BRUCE D.,BEEBE JEAN,MILLER PENELOPE E.,MOYER JAMES D.,CORVALAN JOSE R.,GALLO MICHAEL

Volltext bestellen

Characterization of In sub(0) sub(.) sub(5) sub(3)Ga sub(0) sub(.) sub(4) sub(7) As Photodiodes Exhibiting Low Current and Low Junction Capacitance von Leheny, R F, Nahory, R E, Beebe, E D, DeWinter, J C, Pollack, M A

Volltext

High-efficiency In1− x Ga x As y P1− y /InP photodetectors with selective wavelength response between 0.9 and 1.7 μm von Washington, M. A., Nahory, R. E., Pollack, M. A., Beebe, E. D.

Volltext

Continuous operation of 1.0-μm-wavelength GaAs1− x Sb x /Al y Ga1− y As1− x Sb x double-heterostructure injection lasers at room temperature von Nahory, R. E., Pollack, M. A., Beebe, E. D., DeWinter, J. C., Dixon, R. W.

Volltext

Continuous Operation of 1.0-Micron-Wavelength GaAs1-xSbx/ AlyGa1-yAs1-xSbx Double-Heterostructure Injection Lasers at Room Temperature von Nahory, R E, Pollack, M A, Beebe, E D, DeWinter, J C, Dixon, R W

Volltext

Efficient GaAs1-xSbx/AlyGa1-yAs1-xSbx Double-Heterostructure LED's in the 1-Micron Wavelength Region von Nahory, R E, Pollack, M A, Beebe, E D, DeWinter, J C

Volltext

Efficient GaAs1− x Sb x /Al y Ga1− y As1− x Sb x double heterostructure LED’s in the 1-μm wavelength region von Nahory, R. E., Pollack, M. A., Beebe, E. D., DeWinter, J. C.

Volltext

TA-B4 In0.53Ga0.47As integrated PIN/FET photo receiver von Leheny, R.F., Nahory, R.E., Pollack, M.A., Ballman, A.A., Beebe, E.D., DeWinter, J.C., Martin, R.J.

Volltext