Experimental Wafer Carrier Contamination Analysis and Monitoring in Fully Automated 300 mm Power Production Lines von Schneider, Germar, Bauer, Anton J., Pfeffer, Markus, Zängle, Clara, Franze, Peter

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Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping von Paskaleva, Albena, Rommel, Mathias, Hutzler, Andreas, Spassov, Dencho, Bauer, Anton J

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Validation of an enzyme-linked immunosorbent assay (ELISA) for quantification of endostatin levels in mice as a biomarker of developing glomerulonephritis von Wallwitz, Jacqueline, Aigner, Petra, Gadermaier, Elisabeth, Bauer, Eva, Casanova, Emilio, Bauer, Anton, Stoiber, Dagmar

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Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation von Frey, Lothar, Bauer, Anton J., Erlbacher, Tobias, Albrecht, Matthaeus

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Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices von Weisse, Julietta, Sledziewski, Tomasz, Frey, Lothar, Tschiesche, Mattias, Krieger, Michael, Mitlehner, Heinz, Erlbacher, Tobias, Hauck, Martin, Bauer, Anton J.

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Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast Mapping von Rommel, Mathias, Erlbacher, Tobias, Kallinger, Birgit, Kocher, Matthias, Bauer, Anton J., Schlichting, Holger

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Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors von Weisse, Julietta, Erlbacher, Tobias, Schlichting, Holger, Bauer, Anton J., Kocher, Matthias

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Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC von Rommel, Mathias, Erlbacher, Tobias, Rusch, Oleg, Hellinger, Carsten, Bauer, Anton J.

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Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes von Di Benedetto, Luigi, Licciardo, Gian Domenico, Erlbacher, Tobias, Bauer, Anton J., Bellone, Salvatore

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FiNGS: high quality somatic mutations using filters for next generation sequencing von Wardell, Christopher Paul, Ashby, Cody, Bauer, Michael Anton

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A Model of Electric Field Distribution in Gate Oxide and JFET-Region of 4H-SiC DMOSFETs von Di Benedetto, Luigi, Licciardo, Gian Domenico, Erlbacher, Tobias, Bauer, Anton J., Liguori, Rosalba, Rubino, Alfredo

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Channeling in 4H-SiC from an Application Point of View von Bauer, Anton J., Erlbacher, Tobias, Sledziewski, Tomasz, Pichler, Peter, Häublein, Volker

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Reduced On Resistance in LDMOS Devices by Integrating Trench Gates Into Planar Technology von Erlbacher, Tobias, Bauer, Anton J, Frey, Lothar

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Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors von Bauer, Anton J., Erlbacher, Tobias, Sledziewski, Tomasz, Schlichting, Holger

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Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K von Matthus, Christian D., Di Benedetto, Luigi, Kocher, Matthias, Bauer, Anton J., Licciardo, Gian Domenico, Rubino, Alfredo, Erlbacher, Tobias

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Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation von Bauer, Anton J., Erlbacher, Tobias, Rommel, Mathias, Kocher, Matthias

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On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements von Weisse, Julietta, Sledziewski, Tomasz, Krieger, Michael, Bauer, Anton J., Mitlehner, Heinz, Frey, Lothar, Erlbacher, Tobias, Hauck, Martin

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Distinct Roles for JNK1 and JNK2 in Regulating JNK Activity and c-Jun-Dependent Cell Proliferation von Sabapathy, Kanaga, Hochedlinger, Konrad, Nam, Shin Yuen, Bauer, Anton, Karin, Michael, Wagner, Erwin F.

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Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications von Albrecht, Matthaeus, Erlbacher, Tobias, Pérez, David, Martens, R. Christian, Bauer, Anton J.

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Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC von Rommel, Mathias, Erlbacher, Tobias, Bauer, Anton J., Kim, Seongjun, Lim, Min Who, Shin, Hoon Kyu, Sledziewski, Tomasz, Kim, Hong Ki

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