Variance Analysis in 3-D Integration: A Statistically Unified Model With Distance Correlations von Ayres, Alexandre, Rozeau, Olivier, Borot, Bertrand, Fesquet, Laurent, Batude, Perrine, Brunet, Laurent, Vinet, Maud

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Total-Ionizing-Dose Effects on 3-D Sequentially Integrated FDSOI Ring Oscillators von Toguchi, Shintaro, Zhang, En Xia, Fleetwood, Daniel M., Schrimpf, Ronald D., Moreau, Stephane, Batude, Perrine, Brunet, Laurent, Andrieu, Francois, Alles, Michael L.

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Total-Ionizing-Dose Effects on 3D Sequentially Integrated, Fully Depleted Silicon-on-Insulator MOSFETs von Toguchi, Shintaro, Zhang, En Xia, Gorchichko, Mariia, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Moreau, Stephane, Cheramy, Severine, Batude, Perrine, Brunet, Laurent, Andrieu, Francois, Alles, Michael L.

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Effects of Layer-to-Layer Coupling on the Total-Ionizing-Dose Response of 3-D-Sequentially Integrated FD-SOI MOSFETs von Toguchi, Shintaro, Zhang, En Xia, Rony, Mohammed W., Luo, Xuyi, Fleetwood, Daniel M., Schrimpf, Ronald D., Moreau, Stephane, Cheramy, Severine, Batude, Perrine, Brunet, Laurent, Andrieu, Francois, Alles, Michael L.

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Charge Trapping and Transconductance Degradation in Irradiated 3-D Sequentially Integrated FDSOI MOSFETs von Toguchi, Shintaro, Zhang, En Xia, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Moreau, Stephane, Cheramy, Severine, Batude, Perrine, Brunet, Laurent, Andrieu, Francois, Alles, Michael L.

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Parasitic Coupling in 3D Sequential Integration: The Example of a Two-Layer 3D Pixel von Sideris, Petros, Peizerat, Arnaud, Batude, Perrine, Sicard, Gilles, Theodorou, Christoforos

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Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors von Lu, Cao-Minh Vincent, Fenouillet-Beranger, Claire, Hartmann, Jean-Michel, Rodriguez, Philippe, Benevent, Véronique, Samson, Marie-Pierre, Previtali, Bernard, Tabone, Claude, Cassé, Mikael, Allain, Fabienne, Romano, Giovanni, Brunet, Laurent, Batude, Perrine, Skotnicki, Thomas, Vinet, Maud

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Total-Ionizing-Dose Effects on 3D Sequentially-Integrated FDSOI Ring Oscillators von Toguchi, Shintaro, Zhang, En Xia, Fleetwood, Daniel M., Schrimpf, Ronald D., Moreau, Stephane, Batude, Perrine, Brunet, Laurent, Andrieu, Francois, Alles, Michael L.

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Variance Analysis in 3D Integration: A statistically Unified Model with Distance Correlations von Ayres de Sousa, Alexandre, Rozeau, Olivier, Borot, Bertrand, Fesquet, Laurent, Batude, Perrine, Brunet, Laurent, Vinet, Maud

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Parasitic coupling in 3D equential integration: the example of a two-layer 3D pixel von Sideris, Petros, Peizerat, Arnaud, Batude, Perrine, Sicard, Gilles, Theodorou, Christoforos

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Enabling 3D Monolithic Integration von Batude, Perrine, Vinet, Maud, Pouydebasque, Arnaud, Clavelier, Laurent, LeRoyer, Cyrille, Tabone, Claude, Previtali, Bernard, Sanchez, Loic, Baud, Laurence, Roman, Antonio, Carron, Véronique, Nemouchi, Fabrice, Pocas, Stéphane, Comboroure, Corine, Mazzocchi, Vincent, Grampeix, Helen, Aussenac, François, Deleonibus, Simon

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3-D Sequential Integration: A Key Enabling Technology for Heterogeneous Co-Integration of New Function With CMOS von Batude, P., Ernst, T., Arcamone, J., Arndt, G., Coudrain, P., Gaillardon, P.-E

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Dielectrics stability for intermediate BEOL in 3D sequential integration von Deprat, Fabien, Fenouillet-Beranger, Claire, Jousseaume, Vincent, Guerin, Chloé, Beugin, Virginie, Rochat, Névine, Licitra, Christophe, Caubet-Hilloutou, Véronique, Benoit, Daniel, Imbert, Gregory, Rambal, Nils, Batude, Perrine, Vinet, Maud

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(Invited) 3D Monolithic Integration von Brunet, Laurent, Batude, Perrine, Fenouillet-Beranger, Claire, Vinet, Maud

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An atomistic investigation of the composition dependence in SiGe alloys during Solid Phase Epitaxial Regrowth von Payet, Anthony, Sklénard, Benoît, Barbé, Jean-Charles, Batude, Perrine, Tavernier, Clément, Gergaud, Patrice, Martin-Bragado, Ignacio

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An atomistic investigation of the impact of in-plane uniaxial stress during solid phase epitaxial regrowth von Sklenard, Benoit, Barbe, Jean-Charles, Batude, Perrine, Rivallin, Pierrette, Tavernier, Clement, Cristoloveanu, Sorin, Martin-Bragado, Ignacio

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Technological enhancers effect on Ni0.9Co0.1 silicide stability for 3D sequential integration von Deprat, Fabien, Nemouchi, Fabrice, Fenouillet-Beranger, Claire, Rodriguez, Philippe, Joblot, Sylvain, Gregoire, Magali, Barge, David, Gergaud, Patrice, Rambal, Nils, Batude, Perrine, Vinet, Maud

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(Invited) Sequential 3D Process Integration: Opportunities for Low Temperature Processing von Kerdilès, Sébastien, Acosta-Alba, Pablo, Mathieu, Benoit, Veillerot, Marc, Denis, Hervé, Aussenac, François, Mazzamuto, Fulvio, Toque-Tresonne, Inès, Huet, Karim, Samson, Marie-Pierre, Previtali, Bernard, Brunet, Laurent, Batude, Perrine, Fenouillet-Beranger, Claire

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Technological enhancers effect on Ni sub(0.9)Co sub(0.1) silicide stability for 3D sequential integration von Deprat, Fabien, Nemouchi, Fabrice, Fenouillet-Beranger, Claire, Rodriguez, Philippe, Joblot, Sylvain, Gregoire, Magali, Barge, David, Gergaud, Patrice, Rambal, Nils, Batude, Perrine, Vinet, Maud

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Technological enhancers effect on Ni 0.9 Co 0.1 silicide stability for 3D sequential integration von Deprat, Fabien, Nemouchi, Fabrice, Fenouillet‐Beranger, Claire, Rodriguez, Philippe, Joblot, Sylvain, Gregoire, Magali, Barge, David, Gergaud, Patrice, Rambal, Nils, Batude, Perrine, Vinet, Maud

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