Doped organic transistors operating in the inversion and depletion regime von Lüssem, Björn, Tietze, Max L., Kleemann, Hans, Hoßbach, Christoph, Bartha, Johann W., Zakhidov, Alexander, Leo, Karl

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Atomic Layer Deposition for Coating of High Aspect Ratio TiO2 Nanotube Layers von Zazpe, Raul, Knaut, Martin, Sopha, Hanna, Hromadko, Ludek, Albert, Matthias, Prikryl, Jan, Gärtnerová, V, Bartha, Johann W, Macak, Jan M

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Focusing hard x rays beyond the critical angle of total reflection by adiabatically focusing lenses von Patommel, Jens, Klare, Susanne, Hoppe, Robert, Ritter, Stephan, Samberg, Dirk, Wittwer, Felix, Jahn, Andreas, Richter, Karola, Wenzel, Christian, Bartha, Johann W., Scholz, Maria, Seiboth, Frank, Boesenberg, Ulrike, Falkenberg, Gerald, Schroer, Christian G.

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TSV Transistor—Vertical Metal Gate FET Inside a Through Silicon VIA von Winkler, Felix, Killge, Sebastian, Fischer, Dustin, Richter, Karola, Hiess, Andre, Bartha, Johann W.

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Crystallization behavior of thin ALD-Al2O3 films von JAKSCHIK, Stefan, SCHROEDER, Uwe, HECHT, Thomas, GUTSCHE, Martin, SEIDL, Harald, BARTHA, Johann W

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Simulation approach of atomic layer deposition in large 3D structures von Schwille, Matthias C, Barth, Jonas, Schössler, Timo, Schön, Florian, Bartha, Johann W, Oettel, Martin

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In Situ Reaction Mechanism Studies on Ozone-Based Atomic Layer Deposition of Al2O3 and HfO2 von Rose, Martin, Niinistö, Jaakko, Endler, Ingolf, Bartha, Johann W, Kücher, Peter, Ritala, Mikko

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Applications of Microstructured Silicon Wafers as Internal Reflection Elements in Attenuated Total Reflection Fourier Transform Infrared Spectroscopy von Schumacher, Henrik, Künzelmann, Ulrich, Vasilev, Boris, Eichhorn, Klaus-Jochen, Bartha, Johann W.

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The Doping of Si p‐Field‐Effect Transistor Devices by Gallium Focused Ion Beam Implantation Enabling Flexible Fabrication Routes at Moderate Temperatures von Winkler, Felix, Strobel, Carsten, Wenzel, Christian, Bartha, Johann W.

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Growth of aluminum oxide thin films with enhanced film density by the integration of in situ flash annealing into low-temperature atomic layer deposition von Henke, Thomas, Knaut, Martin, Hossbach, Christoph, Geidel, Marion, Albert, Matthias, Bartha, Johann W.

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Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current Gain von Strobel, Carsten, Chavarin, Carlos A., Richter, Karola, Knaut, Martin, Reif, Johanna, Völkel, Sandra, Jahn, Andreas, Albert, Matthias, Wenger, Christian, Kirchner, Robert, Bartha, Johann W., Mikolajick, Thomas

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Design, Fabrication, and Comparison of 3D Multimode Optical Interconnects on Silicon Interposer von Charania, Sujay, Neumann, Niels, Killge, Sebastian, Winkler, Felix, Al-Husseini, Zaid, Szilagyi, Laszlo, Henker, Ronny, Ellinger, Frank, Plettemeier, Dirk, Bartha, Johann W.

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In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition von Reif, Johanna, Knaut, Martin, Killge, Sebastian, Albert, Matthias, Bartha, Johann W.

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Breakdown and Protection of ALD Moisture Barrier Thin Films von Nehm, Frederik, Klumbies, Hannes, Richter, Claudia, Singh, Aarti, Schroeder, Uwe, Mikolajick, Thomas, Mönch, Tobias, Hoßbach, Christoph, Albert, Matthias, Bartha, Johann W, Leo, Karl, Müller-Meskamp, Lars

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Enhanced growth and Cu diffusion barrier properties of thermal ALD TaNC films in Cu/low-k interconnects von Wojcik, Henry, Hossbach, Christoph, Kubasch, Christoph, Verdonck, Patrick, Barbarin, Yohan, Merkel, Ulrich, Bartha, Johann W., Hübner, Rene, Engelmann, Hans-Jürgen, Friedemann, Michael

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Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers von Fischer, David Dustin, Knaut, Martin, Reif, Johanna, Nehm, Frederik, Albert, Matthias, Bartha, Johann W.

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Microstructure in copper interconnects – Influence of plating additive concentration von Neuner, Jürgen, Zienert, Inka, Peeva, Anita, Preuße, Axel, Kücher, Peter, Bartha, Johann W.

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3D system integration on 300 mm wafer level: High-aspect-ratio TSVs with ruthenium seed layer by thermal ALD and subsequent copper electroplating von Killge, Sebastian, Bartusseck, Irene, Junige, Marcel, Neumann, Volker, Reif, Johanna, Wenzel, Christian, Böttcher, Mathias, Albert, Matthias, Jürgen Wolf, M., Bartha, Johann W.

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Thickness dependent barrier performance of permeation barriers made from atomic layer deposited alumina for organic devices von Klumbies, Hannes, Schmidt, Peter, Hähnel, Markus, Singh, Aarti, Schroeder, Uwe, Richter, Claudia, Mikolajick, Thomas, Hoßbach, Christoph, Albert, Matthias, Bartha, Johann W., Leo, Karl, Müller-Meskamp, Lars

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Temperature dependence of the sticking coefficients of bis-diethyl aminosilane and trimethylaluminum in atomic layer deposition von Schwille, Matthias C., Schössler, Timo, Schön, Florian, Oettel, Martin, Bartha, Johann W.

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