OI-A-2The effect of simvastatin, ezetimibe and their combination on lipids profile, arterial stiffness and inflammatory markers von EFRATI, S, AVERBUCH, M, DISHY, V, FRIDENZON, L, BARCHAIM, A, MORE, A, ABUCHAMAD, R, FYGENZO, M, WEISSGARTEN, J, GOLIK, A

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Low-threshold and high-temperature operation of InGaAlAs-InP lasers von Chen, T.R., Chen, P.C., Ungar, J., Newkirk, M.A., Oh, S., Bar-Chaim, N.

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A high-speed InGaAsP/InP DFB laser with an air-bridge contact configuration von Chen, T.R., Chen, P.C., Gee, C., Bar-Chaim, N.

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Ultralow-threshold graded-index separate-confinement single quantum well buried heterostructure (Al,Ga)As lasers with high reflectivity coatings von DERRY, P. L, YARIV, A, LAU, K. Y, BAR-CHAIM, N, LEE, K, ROSENBERG, J

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Enhancement of modulation bandwidth in InGaAs strained-layer single quantum well lasers von LAU, K. Y, XIN, S, WANG, W. I, BAR-CHAIM, N, MITTELSTEIN, M

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Very large bandwidth strained MQW DFB laser at 1.3 μm von Chen, T.R., Ungar, J., Yeh, X.L., Bar-Chaim, N.

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High-speed operation of single-quantum-well lasers with large gain compression von Lau, K.Y., Bar-Chaim, N.

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High-power high-efficiency GaAlAs superluminescent diodes with an internal absorber for lasing suppression von Kwong, N.S.K., Lau, K.Y., Bar-Chaim, N.

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High-power 1.3 μm superluminescent diode von KWONG, N. S. K, BAR-CHAIM, N, TIRONG CHENG

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Direct amplitude modulation of short-cavity GaAs lasers up to X-band frequencies von LAU, K. Y, BAR-CHAIM, N, URY, I, HARDER, C, YARIV, A

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High-speed digital modulation of ultralow threshold (<1mA) GaAs single quantum well lasers without bias von LAU, K. Y, BAR-CHAIM, N, DERRY, P. L, YARIV, A

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AlGaAs lasers with micro-cleaved mirrors suitable for monolithic integration von Blauvelt, H., Bar-Chaim, N., Fekete, D., Margalit, S., Yariv, A.

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High-power 1310 nm DFB lasers for AM video transmission von Blauvelt, H., Chen, P.C., Bar-Chaim, N., Jiang, P., Lii, C.J., Ury, I.

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High power, high efficiency window buried heterostructure GaAlAs superluminescent diode with an integrated absorber von KWONG, N. S. K, LAU, K. Y, NADAV BAR-CHAIM, LEE, K. J

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Half-ring geometry quantum well GaAlAs lasers von BAR-CHAIM, N, LAU, K. Y, MAZED, M. A, MITTELSTEIN, M, OH, S, UNGAR, J. E, URY, I

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GaAs integrated optoelectronics von Bar-Chaim, N., Margalit, S., Yariv, A., Ury, I.

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Very high frequency GaAlAs laser field-effect transistor monolithic integrated circuit von Ury, Israel, Lau, Kam Y., Bar-Chaim, Nadav, Yariv, Amnon

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Monolithic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode von BAR-CHAIM, N, LAU, K. Y, URY, I, YARIV, A

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Radiation to coherent light converter von WANG, C. L, BAR-CHAIM, N, LAU, K.-Y, MARSHALL, B. R, THOMAS, M. C, ZAGARINO, P. A

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Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP von Koren, U., Yu, K. L., Chen, T. R., Bar-Chaim, N., Margalit, S., Yariv, A.

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