Machine learning investigation of high-k metal gate processes for dynamic random access memory peripheral transistor von Kwon, Namyong, Bang, JoonHo, Sung, Won Ju, Han, Jung Hoon, Lee, Dongin, Jung, Ilwoo, Park, Se Guen, Ban, Hyodong, Hwang, Sangjoon, Shin, Won Yong, Bae, Jinhye, Lee, Dongwoo

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Improvement of VRT immunity using low 10-boron word line in recent DRAM von Jang, Dongkyu, Kim, Daekyum, Lee, Jieun, Lee, Inkyum, Ahn, Sang Bin, Hong, Yoonki, Kim, Shindeuk, Park, Taehoon, Ban, Hyodong

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Gate oxide technology relieving word-line break in 10 nm-class DRAMs von Jang, Dongkyu, Park, Taehoon, Lee, Inkyum, Kim, Jongkyu, Ahn, Sang Bin, Lee, Jieun, Kim, Shindeuk, Ban, Hyodong, Woo, Sung Yun, Hong, Yoonki

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A 16-Gb 37-Gb/s GDDR7 DRAM With PAM3-Optimized TRX Equalization and ZQ Calibration von Cho, Sung-Yong, Choi, Moon-Chul, Baek, Jaehyeok, An, Donggun, Kim, Sang-Hoon, Lee, Daewoong, Yang, Seongyeal, Kim, Se-Mi, Kang, Gil-Young, Park, Juseop, Lee, Kyung-Ho, Jung, Hwan-Chul, Cho, Gun-Hee, Lee, Chan-Yong, Kim, Hye-Ran, Shin, Yong-Jae, Park, Hanna, Lee, Sang-Yong, Kim, Jonghyuk, Won, Bokyeon, Mok, Jungil, Kim, Kijin, Lim, Un-Hak, Jin, Hongjun, Lee, YoungSeok, Kim, Young-Tae, Ha, Heonjoo, Ahn, Jinchan, Sung, Won Ju, Jang, Yoontaek, Song, Hoyoung, Ban, Hyodong, Park, Tae-Hoon, Yoo, Changsik, Oh, Tae-Young, Hwang, SangJoon

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A 16-Gb T-Coil-Based GDDR6 DRAM With Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus Achieving 27-Gb/s/Pin in NRZ von Lee, Daewoong, Baek, Jaehyeok, Kwon, Hye-Jung, Kwon, Dae-Hyun, Cho, Chulhee, Kim, Sang-Hoon, An, Donggun, Chang, Chulsoon, Lim, Unhak, Im, Jiyeon, Sung, Wonju, Kim, Hye-Ran, Park, Sun-Young, Kim, Hyoung-Joo, Seol, Hoseok, Kim, Juhwan, Shin, Jungbum, Kang, Gil-Young, Kim, Yong-Hun, Kim, Sooyoung, Park, Wansoo, Kim, Seok-Jung, Lee, Chan-Yong, Lee, Seungseob, Park, Tae-Hoon, Oh, Chi-Sung, Ban, Hyodong, Ko, Hyungjong, Song, Hoyoung, Oh, Tae-Young, Hwang, Sang-Joon, Oh, Kyung-Suk, Choi, Jung-Hwan, Lee, Jooyoung

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SEMICONDUCTOR DEVICE INCLUDING CONTACT PLUG von HA, Daegwon, KIM, Minwoo, BAN, Hyodong, SONG, Jungwoo, KIM, Jinyong, GU, Bonhong

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Microelectronic memory devices having flat stopper layers von KIM HYUNCHUL, BAN HYODONG, LEE HYUNJU, PARK WONMO

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MICROELECTRONIC MEMORY DEVICES HAVING FLAT STOPPER LAYERS von KIM HYUNCHUL, BAN HYODONG, LEE HYUNJU, PARK WONMO

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Methods of fabricating microelectronic memory devices having flat stopper layers von KIM HYUNCHUL, BAN HYODONG, LEE HYUNJU, PARK WONMO

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MICROELECTRONIC MEMORY DEVICES HAVING FLAT STOPPER LAYERS AND METHODS OF FABRICATING THE SAME von KIM HYUNCHUL, BAN HYODONG, LEE HYUNJU, PARK WONMO

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Stress-induced leakage current comparison of giga-bit scale DRAM capacitors with OCS (one-cylinder-storage) node von Donggun Park, Hyodong Ban, Semin Jung, Hungmo Yang, Wonshik Lee

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