Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN von Bergman, Leah, Dutta, Mitra, Balkas, Cengiz, Davis, Robert F., Christman, James A., Alexson, Dimitri, Nemanich, Robert J.

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Synthesis Routes and Characterization of High-Purity, Single-Phase Gallium Nitride Powders von Balkaş, Cengiz M., Davis, Robert F.

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Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure von Bergman, Leah, Alexson, Dimitri, Murphy, Patrick L., Nemanich, Robert J., Dutta, Mitra, Stroscio, Michael A., Balkas, Cengiz, Shin, Hyumin, Davis, Robert F.

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Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT) von Basceri, C., Khlebnikov, Y., Muzykov, P., Stratiy, G., Silan, M., Khlebnikov, I., Sharma, M., Balkas, Cengiz M.

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Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport von Kopec, A., Ware, R., Sanchez, Edward M., Poplawski, S., Wang, Shao Ping, Balkas, Cengiz M., Timmerman, A.G., Holmes, S.N.

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Sublimation growth and characterization of bulk aluminum nitride single crystals von Balkaş, Cengiz M., Sitar, Zlatko, Zheleva, Tsvetanka, Bergman, L., Nemanich, R., Davis, R.F.

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Silicon carbide dimpled substrate von Harris, Christopher, Basceri, Cem, Balkas, Cengiz, Gehrke, Thomas

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SILICON CARBIDE DIMPLED SUBSTRATE von BASCERI, Cem, HARRIS, Christopher, BALKAS, Cengiz, GEHRKE, Thomas

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Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers von Roth, Matthew D., Mier, M., Balkas, Cengiz M., Boeckl, John, Nelson, M.

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Role of Temperature Gradient in Bulk Crystal Growth of SiC von Roth, Matthew D., Balkas, Cengiz M., Yushin, Nikolay K., Maltsev, Andrei A.

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Reduction of Macrodefects in Bulk SiC Single Crystals von Roth, Matthew D., Sharma, Mrityunjay, Balkas, Cengiz M., Heydemann, V.D., Yushin, Nikolay K., Maltsev, Andrei A.

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Resistivity Mapping of Semi-Insulating 6H-SiC Wafers von Roth, Matthew D., Mitchel, W.C., Wang, Shao Ping, Heydemann, V.D., Balkas, Cengiz M., Yushin, Nikolay K., Sharma, M.

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MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE von BASCERI, Cem, BALAKRISHNA, Vijay, TSVETKOV, Valeri, JENNY, Jason R, KHLEBNIKOV, Yuri, BALKAS, Cengiz, POWELL, Adrian R, KHLEBNIKOV, Igor, CARTER, Calvin H., Jr, HOBGOOD, Hudson McD, SILAN, Murat N, LEONARD, Robert T

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Silicon carbide dimpled substrate von BASCERI CEM, GEHRKE THOMAS, HARRIS CHRISTOPHER, BALKAS CENGIZ

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SILICON CARBIDE DIMPLED SUBSTRATE von CENGIZ BALKAS, CEM BASCERI, HARRIS CHRISTOPHER, GOERKE THOMAS

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SILICON CARBIDE DIMPLED SUBSTRATE von BALKAS, CENGIZ, HARRIS, CHRISTOPHER, BASCERI, CEM, GEHRKE, THOMAS

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Silicon carbide dimpled substrate von BALKAS, CENGIZ, HARRIS, CHRISTOPHER, BASCERI, CEM, GEHRKE, THOMAS

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Silicon carbide dimpled substrate von BALKAS, CENGIZ, HARRIS, CHRISTOPHER, BASCERI, CEM, GEHRKE, THOMAS

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Method of forming semi-insulating silicon carbide single crystal von BASCERI CEM, BALKAS CENGIZ M, YUSHIN NIKOLAY

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Method of forming semi-insulating silicon carbide single crystal von Basceri, Cem, Yushin, Nikolay, Balkas, Cengiz M

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