New method to evaluate materials outgassing used in MEMS thin film packaging technology von Savornin, B., Baillin, X., Blanquet, E., Nuta, I., Saint Patrice, D., Nicolas, P., Charvet, P.L., Pornin, J.L.

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Structure and characterization of the dislocations in tilt grain boundaries between Σ = 1 and Σ = 3; a high resolution electron microscopy study von Thibault, J, Putaux, J.L, Jacques, A, George, A, Michaud, H.M, Baillin, X

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Nanopackaging solution from clean room to UHV Environment: Hydrogen Passivated Si (100) Substrate Fabrication and Use for Atomic Scale Investigations and Self-Assembled Monolayer G... von Reynaud, P., Thuaire, A., Sordes, D., Rauer, C., Hartmann, J.M., Moriceau, H., Bhartia, B., Puniredd, S.R., Troadec, C., Srinivasan, M.P., Baillin, X., Cheramy, S.

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Through silicon vias technology for CMOS image sensors packaging von Henry, D., Jacquet, F., Neyret, M., Baillin, X., Enot, T., Lapras, V., Brunet-Manquat, C., Charbonnier, J., Aventurier, B., Sillon, N.

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Hermetic wafer-level packaging development for RF MEMS switch von Ferrandon, C, Greco, F, Lagoutte, E, Descours, P, Enyedy, G, Pellat, M, Gillot, C, Rey, P, Mercier, D, Cueff, M, Baillin, X, Perruchot, F, Sillon, N, Liu, L J, Pacheco, S, Miller, M

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Direct evidence of dislocation transmission through ∑= 9 grain boundaries in germanium and silicon by in situ high-voltage electron microscopy observations von BAILLIN, X, PELISSIER, J, JACQUES, A, GEORGE, A

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Gold-tin bonding for 200mm wafer level hermetic MEMS packaging von Garnier, A., Lagoutte, E., Baillin, X., Gillot, C., Sillon, N.

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Dislocation transmission through ∑ = 9 symmetrical tilt boundaries in silicon and germanium: I. In situ observations by synchrotron X-ray topography and high-voltage electron micro... von Baillin, X., Pelissier, J., Bacmann, J. J., Jacques, A., George, A.

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3D MEMS high vacuum wafer level packaging von Nicolas, S., Caplet, S., Greco, F., Audoin, M., Baillin, X., Fanget, S.

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Outgassing characterization of MEMS thin film packaging materials von Savornin, B., Baillin, X., Blanquet, E., Nuta, I., Saint Patrice, D., Nicolas, P., Charvet, P. L., Pornin, J. L.

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Influence of the Dissociation into Shockley Partials on the Dislocation Transmission across [011] Tilt Grain Boundaries in Elemental Semiconductors von Baillin, X., Benhorma, H.A., Michaud, H.M., Jacques, Alain, George, A.

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Velocities of Glissile D.S.C. Dislocations in A Σ = 9 (-1 2-2)Grain Boundary in Silicon von Baillin, X., Benhorma, H.A., Jacques, Alain, George, A., Iwami, Motohiro

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Via First Technology Development Based on High Aspect Ratio Trenches Filled with Doped Polysilicon von Henry, D., Baillin, X., Lapras, V., Vaudaine, M.H., Quemper, J.M., Sillon, N., Dunne, B., Hernandez, C., Vigier-Blanc, E.

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High Aspect Ratio Vias First for Advanced Packaging von Henry, D., Baillin, X., Lapras, V., Sillon, N., Dunne, B., Hernandez, C., Vigier-Blanc, E.

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Direct evidence of dislocation transmission through ε= 9 grain boundaries in germanium and silicon by in situ high-voltage electron microscopy observations von Baillin, X., Pelissier, J., Jacques, A., George, A.

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High Voltage Electron Microscopy In Situ Study of Germanium Bicrystals Deformation von Baillin, X, Pelissier, J

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Velocity of grain-boundary dislocations in a Σ = 9 bicrystal of silicon von Benhorma, H. A., Jacques, A., George, A., Baillin, X.

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II. Dynamic and crystallographic analysis von Jacques, A., George, A., Baillin, X., Bacmann, J. J.

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Direct evidence of dislocation transmission through S=9 grain boundaries in germanium and silicon by in situ high-voltage electron microscopy observations von Baillin, X, Jacques, A, Pelissier, J, George, A

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Dislocation transmission through =9 symmetrical tilt boundaries in silicon and germanium. II. Dynamic and crystallographic analysis von Jacques, A, George, A, BAILLIN, X, Bacmann, J J

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