Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes von Kim, Byung-Jae, Lee, Chongmin, Jung, Younghun, Hyeon Baik, Kwang, Mastro, Michael A., Hite, Jennifer K., Eddy, Charles R., Kim, Jihyun

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Hydrogen sensing characteristics of semipolar (112¯2) GaN Schottky diodes von Hyeon Baik, Kwang, Kim, Hyonwoong, Lee, Sung-Nam, Lim, Eunju, Pearton, S. J., Ren, F., Jang, Soohwan

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High-Reflectance and Thermally Stable AgCu Alloy p-Type Reflectors for GaN-Based Light-Emitting Diodes von Hyunsoo Kim, Kwang Hyeon Baik, Jaehee Cho, Jeong Wook Lee, Yoon, S., Hyungkun Kim, Sung-Nam Lee, Sone, C., Yongjo Park, Tae-Yeon Seong

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Effects of Photoelectrochemical Etching of N-Polar and Ga-Polar Gallium Nitride on Sapphire Substrates von Jung, Younghun, Baik, Kwang Hyeon, Ren, Fan, Pearton, Stephen J., Kim, Jihyun

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Hydrogen Sensing Performance of ZnO Schottky Diodes in Humid Ambient Conditions with PMMA Membrane Layer von Jang, Soohwan, Jung, Sunwoo, Baik, Kwang Hyeon

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Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer von Sunwoo Jung, Kwang Hyeon Baik, Fan Ren, Pearton, Stephen J., Soohwan Jang

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Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layer von Song, Hooyoung, Suh, Jooyoung, Kyu Kim, Eun, Hyeon Baik, Kwang, Hwang, Sung-Min

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Enhanced Light Output of GaN-Based Light-Emitting Diodes by Using Omnidirectional Sidewall Reflectors von Kim Hyunsoo, Baik Kwang Hyeon, Cho Jaehee, Kim Kyoung-Kook, Lee Sung-Nam, Sone, C., Park, Y., Seong Tae-Yeon

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Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD von Son, Ji-Su, Hyeon Baik, Kwang, Gon Seo, Yong, Song, Hooyoung, Hoon Kim, Ji, Hwang, Sung-Min, Kim, Tae-Geun

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Anisotropic microstructure of hydrothermally-grown non-polar a-plane ZnO on a-plane GaN film von Baik, Kwang Hyeon, Kim, Hyonwoong, Jang, Soohwan

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Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing von Sunwoo Jung, Kwang Hyeon Baik, Fan Ren, Pearton, Stephen J., Soohwan Jang

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Anisotropic electrical conductivity of surface-roughened semipolar GaN films by photochemical etching von Jang, Soohwan, Lee, Sohyun, Baik, Kwang Hyeon

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Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate von Hwang, Sung-Min, Seo, Yong Gon, Baik, Kwang Hyeon, Cho, In-Sung, Baek, Jong Hyeob, Jung, Sukkoo, Kim, Tae Geun, Cho, Meoungwhan

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Three-dimensional graphene foam-based transparent conductive electrodes in GaN-based blue light-emitting diodes von Kim, Byung-Jae, Yang, Gwangseok, Joo Park, Min, Seop Kwak, Joon, Hyeon Baik, Kwang, Kim, Donghwan, Kim, Jihyun

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Chemical etching behaviors of semipolar (112&cmb.macr;2) and nonpolar (112&cmb.macr;0) gallium nitride films von Jung, Younghun, Baik, Kwang Hyeon, Mastro, Michael A, Hite, Jennifer K, Eddy, Charles R, Kim, Jihyun

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Design and fabrication of vertical-injection GaN-based light-emitting diodes von Kim, Hyunsoo, Kim, Kyoung-Kook, Lee, Sung-Nam, Baik, Kwang-Hyeon

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Etched Surface Morphology of Heteroepitaxial Nonpolar  ( 112̄0 )  and Semipolar  ( 112 ¯ 2 )  GaN Films by Photoenhanced Chemical Wet Etching von Baik, Kwang Hyeon, Song, Hoo-Young, Hwang, Sung-Min, Jung, Younghun, Ahn, Jaehui, Kim, Jihyun

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Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates von Seo, Yong Gon, Baik, Kwang Hyeon, Song, Hooyoung, Son, Ji-Su, Oh, Kyunghwan, Hwang, Sung-Min

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Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates von Son, Ji-Su, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Baik, Kwang Hyeon, Seo, Yong Gon, Hwang, Sung-Min

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Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates von Hwang, Sung-Min, Song, Hooyoung, Seo, Yong Gon, Son, Ji-Su, Kim, Jihoon, Baik, Kwang Hyeon

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