Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature von Mensz, Piotr M., Dror, Ben, Ajay, Akhil, Bougerol, Catherine, Monroy, Eva, Orenstein, Meir, Bahir, Gad

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Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics von Yokev, Idan, Agrawal, M., Eyadat, B., Kostianovskii, V., Gal, L., Cohen, A., Kornblum, L., Dharmarasu, N., Radhakrishnan, K., Orenstein, M., Bahir, Gad

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Electronic bound states in the continuum above (Ga,In)(As,N)/(Al,Ga)As quantum wells von Albo, Asaf, Fekete, Dan, Bahir, Gad

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Mid-Infrared GaN/AlGaN Quantum Cascade Detector Grown on Silicon von Dror, Ben, Zheng, Y., Agrawal, M., Radhakrishnan, K., Orenstein, Meir, Bahir, Gad

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Improved hole confinement in GaInAsN-GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers von Albo, Asaf, Bahir, Gad, Fekete, Dan

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Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al2O3/GaN/AlGaN/AlN/GaN Capacitors von Mehari, Shlomo Solomon, Yalon, Eilam, Gavrilov, Arkady, Mistele, David, Bahir, Gad, Eizenberg, Moshe, Ritter, Dan

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Study of Single Silicon Quantum Dots’ Band Gap and Single-Electron Charging Energies by Room Temperature Scanning Tunneling Microscopy von Zaknoon, Bashir, Bahir, Gad, Saguy, Cecile, Edrei, Rachel, Hoffman, Alon, Rao, Rajesh A, Muralidhar, Ramachandran, Chang, Ko-Min

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The opportunity of using InGaAsN/AlGaAs quantum wells for extended short-wavelength infrared photodetection von Albo, Asaf, Fekete, Dan, Bahir, Gad

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Vertical currents due to interatomic Coulombic decay in experiments with two coupled quantum wells von Goldzak, Tamar, Gantz, Liron, Gilary, Ido, Bahir, Gad, Moiseyev, Nimrod

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Photocurrent spectroscopy of intersubband transitions in GaInAsN/(Al)GaAs asymmetric quantum well infrared photodetectors von Albo, Asaf, Fekete, Dan, Bahir, Gad

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First demonstration of plasmonic GaN quantum cascade detectors with enhanced efficiency at normal incidence von Pesach, Asaf, Sakr, Salam, Giraud, Etienne, Sorias, Ofir, Gal, Lior, Tchernycheva, Maria, Orenstein, Meir, Grandjean, Nicolas, Julien, Francois H, Bahir, Gad

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Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications von Albo, Asaf, Cytermann, Catherine, Bahir, Gad, Fekete, Dan

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A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n(+)-p HgCdTe photodiodes von Rosenfeld, David, Bahir, Gad

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Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al sub(2)O sub(3)/GaN/AlGaN /AlN/GaN Capacitors von Mehari, Shlomo Solomon, Yalon, Eilam, Gavrilov, Arkady, Mistele, David, Bahir, Gad, Eizenberg, Moshe, Ritter, Dan

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Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells von Gross, Elad, Nevet, Amir, Pesach, Asaf, Monroy, Eva, Schacham, Shmuel E, Orenstein, Meir, Segev, Mordechai, Bahir, Gad

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Polarization-independent intersubband based GaInAsN quantum-well photodetector with dominant detection at 1.42   μ m von Albo, Asaf, Vardi, Alon, Fekete, Dan, Bahir, Gad

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Strain-induced nitrogen incorporation in atomic layer epitaxy growth of InAsN/GaAs quantum wells using metal organic chemical vapor deposition von Albo, Asaf, Cytermann, Catherine, Bahir, Gad, Fekete, Dan

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Strain-induced nitrogen incorporation in atomic layer epitaxy growthof InAsN/GaAs quantum wells using metal organic chemical vapor deposition von Albo, Asaf, Cytermann, Catherine, Bahir, Gad, Fekete, Dan

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Interatomic Coulombic Decay in two coupled Quantum Wells von Goldzak, Tamar, Gantz, Liron, Gilary, Ido, Gad Bahir, Moiseyev, Nimrod

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Interatomic Coulombic decay in two coupled quantum wells von Goldzak, Tamar, Gantz, Liron, Gilary, Ido, Bahir, Gad, Moiseyev, Nimrod

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