Structural characteristics and defect states of intrinsic GaN epi-layers in a high power device structure von Bong, Chung-Jong, Ahn, Chang Wan, Bae, Sung-Bum, Kim, Eun Kyu

Volltext

Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures von Kim, Zin-Sig, Lee, Hyung-Seok, Na, Jeho, Bae, Sung-Bum, Nam, Eunsoo, Lim, Jong-Won

Volltext

Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors von Chang, Sung-Jae, Cho, Kyu-Jun, Lee, Sang-Youl, Jeong, Hwan-Hee, Lee, Jae-Hoon, Jung, Hyun-Wook, Bae, Sung-Bum, Choi, Il-Gyu, Kim, Hae-Cheon, Ahn, Ho-Kyun, Lim, Jong-Won

Volltext

380‐nm Ultraviolet Light‐Emitting Diodes with InGaN/AlGaN MQW Structure von Bae, Sung‐Bum, Kim, Sung‐Bok, Kim, Dong‐Churl, Nam, Eun Soo, Lim, Sung‐Mook, Son, Jeong‐Hwan, Jo, Yi‐Sang

Volltext

Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique von Park, Honghwi, Won, Heungsup, Lim, Changhee, Zhang, Yuxuan, Han, Won Seok, Bae, Sung-Bum, Lee, Chang-Ju, Noh, Yeho, Lee, Junyeong, Lee, Jonghyung, Jung, Sunghwan, Choi, Muhan, Lee, Sunghwan, Park, Hongsik

Volltext

Epitaxially grown GaN thin-film SAW filter with high velocity and low insertion loss von Lee, Suk-Hun, Jeong, Hwan-Hee, Bae, Sung-Bum, Choi, Hyun-Chul, Lee, Jung-Hee, Lee, Yong-Hyun

Volltext

Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission von Ko, Young-Ho, Bae, Sung-Bum, Kim, Sung-Bock, Kim, Dong Churl, Leem, Young Ahn, Cho, Yong-Hoon, Nam, Eun-Soo

Volltext

Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs von Chang, Sung-Jae, Cho, Kyu Jun, Jung, Hyun-Wook, Kim, Jeong-Jin, Jang, Yoo-Jin, Bae, Sung-Bum, Kim, Dong-Seok, Bae, Youngho, Yoon, Hyung Sup, Ahn, Ho-Kyun, Min, Byoung-Gue, Kim, Haecheon, Lim, Jong-Won, Kang, Dong-Min

Volltext

Self‐Consistent Subband Calculations of AlGaN/GaN Single Heterojunctions von Lee, Kyu‐Seok, Yoon, Doo‐Hyeb, Bae, Sung‐Bum, Park, Mi‐Ran, Kim, Gil‐Ho

Volltext

Plasma assisted LED wafer scribing and fabrication of Ag nanoparticle-embedded LED von Lee, Jong-Moo, Bae, Sung-Bum, Youn, Doo-Hyub, Park, Suntak, Ju, Jung Jin, Jang, Moon Sik, Jung, Hyun Min, Kim, Chang Tae

Volltext

Anti-crossing effect and optimization of waveguide structure in InGaN/GaN/AlGaN laser diode on sapphire substrate von Kim, Dong Churl, Bae, Sung Bum, Kim, Sung Bock, Ko, Young-Ho, Leem, Young Ahn, Nam, Eun Soo

Volltext

Normally-off dual gate AlGaN/GaN MISFET with selective area-recessed floating gate von Ahn, Ho-Kyun, Kim, Zin-Sig, Bae, Sung-Bum, Kim, Hae-Cheon, Kang, Dong-Min, Kim, Sung-Il, Lee, Jong-Min, Min, Byoung-Gue, Yoon, Hyoung-Sup, Lim, Jong-Won, Kwon, Yong-Hwan, Nam, Eun-Soo, Park, Hyung-Moo, Kim, Hyun-Seok, Lee, Jung-Hee

Volltext

Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures von Bae, Sung-Bum, Kim, Ki-Won, Lee, Yong Soo, Lee, Jung-Hee, Bae, Youngho, Cristoloveanu, Sorin

Volltext

Performance improvement of normally off AlGaN/GaN FinFETs with fully gate-covered nanochannel von Im, Ki-Sik, Son, Dong-Hyeok, Ahn, Ho-Kyun, Bae, Sung-Bum, Mun, Jae-Kyoung, Nam, Eun-Soo, Cristoloveanu, Sorin, Lee, Jung-Hee

Volltext

Normally-Off AlGaN/GaN Metal--Oxide--Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier von Kim, Dong-Seok, Im, Ki-Sik, Kang, Hee-Sung, Kim, Ki-Won, Bae, Sung-Bum, Mun, Jae-Kyoung, Nam, Eun-Soo, Lee, Jung-Hee

Volltext

Optical properties of the InAs/InAlGaAs quantum dots subjected to thermal treatments von Jo, Byounggu, Kim, Jaesu, Lee, Kwang Jae, Kim, Hyunjune, Park, Dongwoo, Lee, Cheul-Ro, Kim, Jin Soo, Bae, Sung Bum, Han, Won Seok, Oh, Dae Kon, Leem, Jae-Young, Kim, Jong Su, Lee, Sang Jun, Noh, Sam Kyu

Volltext

Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region von Heon Shin, Seung, Kim, Do-Kywn, Bae, Sung-bum, Lee, Hyung-Seok, Lee, Jung-Hee, Kim, Dong-Seok

Volltext

Mechanism of two-dimensional electron gas formation in AlxGa1−xN/GaN heterostructures von Jang, Ho Won, Jeon, Chang Min, Kim, Ki Hong, Kim, Jong Kyu, Bae, Sung-Bum, Lee, Jung-Hee, Choi, Jae Wu, Lee, Jong-Lam

Volltext

Effect of Al doping in GaN films grown by metalorganic chemical vapor deposition von Lee, Jae-Hoon, Hahm, Sung-Ho, Lee, Jung-Hee, Bae, Sung-Bum, Lee, Kyu-Seok, Cho, Yong-Hoon, Lee, Jong-Lam

Volltext

Study on Defect States in GaN Epilayer Induced by Irradiation of High-Energy Electrons von Ha, Limkyung, Lee, Dong Uk, Kim, Jin Soak, Kim, Eun Kyu, Lee, Byung Cheol, Oh, Dae Kon, Bae, Sung-Bum, Lee, Kyu-Seok

Volltext