Characteristics of HfO2 thin films grown by plasma atomic layer deposition von Kim, Jinwoo, Kim, Seokhoon, Jeon, Hyeongtag, Cho, M.-H., Chung, K.-B., Bae, Choelhwyi

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Surface passivation of n-GaN by nitrided-thin-Ga2O3∕SiO2 and Si3N4 films von Bae, Choelhwyi, Krug, Cristiano, Lucovsky, Gerald, Chakraborty, Arpan, Mishra, Umesh

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Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods von Kim, Jinwoo, Kim, Seokhoon, Kang, Hyunseok, Choi, Jihoon, Jeon, Hyeongtag, Cho, Mannho, Chung, Kwunbum, Back, Sungkwun, Yoo, Kyungdong, Bae, Choelhwyi

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Suppression of parasitic Si substrate oxidation in HfO2–ultrathin-Al2O3–Si structures prepared by atomic layer deposition von Park, Myungjin, Koo, Jaehyoung, Kim, Jinwoo, Jeon, Hyeongtag, Bae, Choelhwyi, Krug, Cristiano

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Work-function difference between Al and n-GaN from Al-gated n-GaN∕nitrided-thin-Ga2O3∕SiO2 metal oxide semiconductor structures von Bae, Choelhwyi, Krug, Cristiano, Lucovsky, Gerald, Chakraborty, Arpan, Mishra, Umesh

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Low temperature semiconductor surface passivation for nanoelectronic device applications von Bae, Choelhwyi, Lucovsky, Gerald

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Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods von Choi, Jihoon, Kim, Seokhoon, Kim, Jinwoo, Kang, Hyunseok, Jeon, Hyeongtag, Bae, Choelhwyi

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Abnormal Grain Growth of Niobium-Doped Strontium Titanate Ceramics von Bae, Choelhwyi, Park, Jae-Gwan, Kim, Yoon-Ho, Jeon, Hyeongtag

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Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process von Bae, Choelhwyi, Lucovsky, Gerald

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Low-temperature preparation of GaN-SiO{sub 2} interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation von Bae, Choelhwyi, Lucovsky, Gerald

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Low-temperature preparation of Ga N - Si O 2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation von Bae, Choelhwyi, Lucovsky, Gerald

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Low-temperature preparation of Ga N - Si O 2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process von Bae, Choelhwyi, Lucovsky, Gerald

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Low-temperature preparation of GaN-SiO{sub 2} interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process von Bae, Choelhwyi, Lucovsky, Gerald

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Ex situ growth of the c -axis preferred oriented SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates von Bae, Choelhwyi, Lee, Jeon-Kook, Lee, Si-Hyung, Jung, Hyung-Jin

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Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics von Bae, Choelhwyi, Krug, Cristiano, Lucovsky, Gerald

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Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition von Kim, Seokhoon, Woo, Sanghyun, Hong, Hyungseok, Kim, Hyungchul, Jeon, Hyeongtag, Bae, Choelhwyi

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Effect of Buffer Layer for HfO[sub 2] Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition von Kim, Seokhoon, Woo, Sanghyun, Hong, Hyungseok, Kim, Hyungchul, Jeon, Hyeongtag, Bae, Choelhwyi

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Electron trapping in metal-insulator-semiconductor structures on n - GaN with SiO 2 and Si 3 N 4 dielectrics von Bae, Choelhwyi, Krug, Cristiano, Lucovsky, Gerald

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Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation von Bae, Choelhwyi, Lucovsky, Gerald

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Oxide formation and passivation for micro- and nano-electronic devices von Bae, Choelhwyi, Lucovsky, Gerald

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