Symmetric arsenic dimers on the Si (100) surface von UHRBERG, R. I. G, BRINGANS, R. D, BACHRACH, R. Z, NORTHRUP, J. E

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Excimer-laser-induced crystallization of hydrogenated amorphous silicon von WINER, K, ANDERSON, G. B, READY, S. E, BACHRACH, R. Z, JOHNSON, R. I, PONCE, F. A, BOYCE, J. B

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Arsenic-terminated Ge(111): an ideal 1×1 surface von BRINGANS, R. D, UHRBERG, R. I. G, BACHRACH, R. Z, NORTHRUP, J. E

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Low temperature crystallization of amorphous silicon using an excimer laser von BACHRACH, R. Z, WINER, K, BOYCE, J. B, READY, S. E, JOHNSON, R. I, ANDERSON, G. B

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Formation of the interface between GaAs and Si: implications for GaAs-on-Si heteroepitaxy von BRINGANS, R. D, OLMSTEAD, M. A, UHRBERG, R. I. G, BACHRACH, R. Z

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Comparison between the Electronic Structures of GaAs(111) and GaAs ( 1 ― 1 ― 1 ― ) from Angle-Resolved Photoemission von Bringans, R. D., Bachrach, R. Z.

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Multiple Oxidation States of Al Observed by Photoelectron Spectroscopy of Substrate Core Level Shifts von Flodstrom, S. A., Bachrach, R. Z., Bauer, R. S., Hagström, S. B. M.

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Chemically Induced Charge Redistribution at Al-GaAs Interfaces von Brillson, L. J., Bachrach, R. Z., Bauer, R. S., McMenamin, J.

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The effect of hydrogen chemisorption on GaAs(100) and GaAs(1̄1̄1̄) von Bringans, R.D., Bachrach, R.Z.

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Diffraction grating transmission efficiencies for XUV and soft x rays von Schnopper, H W, Van Speybroeck, L P, Delvaille, J P, Epstein, A, Källne, E, Bachrach, R Z, Dijkstra, J, Lantward, L

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Ordered Oxygen Overlayer Associated with Chemisorption State on Al(111) von Flodström, S. A., Martinsson, C. W. B., Bachrach, R. Z., Hagström, S. B. M., Bauer, R. S.

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A Photon Counting Apparatus for Kinetic and Spectral Measurements von Bachrach, R. Z.

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Electronic and atomic structure of GaAs epitaxial overlays on Si (111) von NORTHRUP, J. E, BRINGANS, R. D, UHRBERG, R. I. G, OLMSTEAD, M. A

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Au and Al interface reactions with SiO2 von Bauer, R. S., Bachrach, R. Z., Brillson, L. J.

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Pressure dependent oxidation of Al(111): A photoemission and surface exafs study von Bachrach, R.Z., Hansson, G.V., Bauer, R.S.

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Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surface von UHRBERG, R. I. G, BRINGANS, R. D, OLMSTEAD, M. A, BACHRACH, R. Z, NORTHRUP, J. E

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Atomic interdiffusion at Au-Al/GaAs interfaces von Brillson, L. J., Bauer, R. S., Bachrach, R. Z., Hasson, Goran

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Measurement of the Extrinsic Room-Temperature Minority Carrier Lifetime in GaP von Bachrach, R. Z., Lorimor, O. G.

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Electronic structure of Si(111) surfaces von Hansson, G.V., Bachrach, R.Z., Bauer, R.S., Chadi, D.J., Göpel, W.

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Oxidation of Aluminum Surfaces Studied by Synchrotron Radiation Photoelectron Spectroscopy von Hagström, S B M, Bachrach, R Z, Bauer, R S, Flodström, S A

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