Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs von Visciarelli, Michele, Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna, Baccarani, Giorgio

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Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation von Di Lecce, Valerio, Grassi, Roberto, Gnudi, Antonio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

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TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors von Reggiani, S., Barone, G., Poli, S., Gnani, E., Gnudi, A., Baccarani, G., Ming-Yeh Chuang, Weidong Tian, Wise, R.

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Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation von Lenzi, M., Palestri, P., Gnani, E., Reggiani, S., Gnudi, A., Esseni, D., Selmi, L., Baccarani, G.

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Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs von Poli, S., Pala, M.G., Poiroux, T., Deleonibus, S., Baccarani, G.

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Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors von Reggiani, S., Poli, S., Denison, M., Gnani, E., Gnudi, A., Baccarani, G., Pendharkar, S., Wise, R.

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Characterization and modeling of electrical stress degradation in STI-based integrated power devices von Reggiani, Susanna, Barone, Gaetano, Gnani, Elena, Gnudi, Antonio, Baccarani, Giorgio, Poli, Stefano, Wise, Rick, Chuang, Ming-Yeh, Tian, Weidong, Pendharkar, Sameer, Denison, Marie

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Semianalytical quantum model for graphene field-effect transistors von Pugnaghi, Claudio, Grassi, Roberto, Gnudi, Antonio, Di Lecce, Valerio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

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Quasi-Ballistic Transport in Nanowire Field-Effect Transistors von Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

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Optimization of n- and p-type TFETs Integrated on the Same / Technology Platform von Baravelli, Emanuele, Gnani, Elena, Grassi, Roberto, Gnudi, Antonio, Reggiani, Susanna, Baccarani, Giorgio

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Theory of the Junctionless Nanowire FET von Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

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Theoretical foundations of the quantum drift-diffusion and density-gradient models von Baccarani, Giorgio, Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna, Rudan, Massimo

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Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors von Gnudi, A., Reggiani, S., Gnani, E., Baccarani, G.

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Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current von Beneventi, Giovanni Betti, Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna, Baccarani, Giorgio

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TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications von Baravelli, Emanuele, Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna, Baccarani, Giorgio

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Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening von Beneventi, Giovanni Betti, Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna, Baccarani, Giorgio

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Physical Model of the Junctionless UTB SOI-FET von Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

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Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform von Visciarelli, Michele, Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna, Baccarani, Giorgio

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Design guidelines for GaSb/InAs TFET exploiting strain and device size von Visciarelli, Michele, Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna, Baccarani, Giorgio

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Theoretical analysis and modeling for nanoelectronics von Baccarani, Giorgio, Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna

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