Limiting Factors of the Safe Operating Area for Power Devices von Schulze, H-J, Niedernostheide, F-J, Pfirsch, F., Baburske, R.

Volltext

Some aspects on ruggedness of SiC power devices von Lutz, Josef, Baburske, Roman

Volltext

Dynamic avalanche in bipolar power devices von Lutz, Josef, Baburske, Roman

Volltext

Challenges Regarding Parallel Connection of SiC JFETs von Peftitsis, D., Baburske, R., Rabkowski, J., Lutz, J., Tolstoy, G., Nee, H.

Volltext

Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in \hbox^- \hbox^ - \hbox^ Diodes von Baburske, R., Heinze, B., Lutz, J., Niedernostheide, F.-J.

Volltext

The \hbox^-Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes von Lutz, J., Baburske, R., Min Chen, Heinze, B., Domeij, M., Felsl, H.-P., Schulze, H.-J.

Volltext

Cathode-Side Current Filaments in High-Voltage Power Diodes Beyond the SOA Limit von Baburske, R., Niedernostheide, F., Lutz, J., Schulze, H., Falck, E., Bauer, J. G.

Volltext

Optimization of diodes using the SPEED concept and CIBH von Pfaffenlehner, M., Felsl, Hans-Peter, Niedernostheide, F.-J, Pfirsch, F., Schulze, H.-J, Baburske, R., Lutz, J.

Volltext

Limiting Factors of the Safe Operating Area for Power Devices : ADVANCED MODELING OF POWER DEVICES AND THEIR APPLICATIONS von SCHULZE, Hans-Joachim, NIEDERNOSTHEIDE, Franz-Josef, PFIRSCH, Frank, BABURSKE, Roman

Volltext

Al modification as indicator of current filaments in IGBTs under repetitive SC operation von Mysore, Madhu Lakshman, Bhojani, Riteshkumar, Kowalsky, Jens, Lutz, Josef, Baburske, Roman, Schulze, Hans-Joachim, Niedernostheide, Franz-Josef

Volltext

The nn+-Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes von LUTZ, Josef, BABURSKE, Roman, MIN CHEN, HEINZE, Birk, DOMEIJ, Martin, FELSL, Hans-Peter, SCHULZE, Hans-Joachim

Volltext

Semiconductor Device Including First Gate Electrode and Second Gate Electrode von Baburske, Roman

Volltext bestellen

Dual Gate Power Semiconductor Device and Method of Controlling a Dual Gate Power Semiconductor Device von Baburske, Roman

Volltext bestellen

Semiconductor device including first gate electrode and second gate electrode von Baburske, Roman

Volltext bestellen

Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in p+-n--n+ Diodes von BABURSKE, Roman, HEINZE, Birk, LUTZ, Josef, NIEDERNOSTHEIDE, Franz-Josef

Volltext

RC IGBT, Method of Producing an RC IGBT and Method of Controlling a Half Bridge Circuit von Baburske, Roman

Volltext bestellen

Semiconductor Device Including First Gate Electrode and Second Gate Electrode von Baburske, Roman

Volltext bestellen

Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept: Power Semiconductor Devices and Integrates Circuits von BASLER, Thomas, PFAFFENLEHNER, Manfred, FELSL, Hans Peter, NIEDERNOSTHEIDE, Franz-Josef, PFIRSCH, Frank, SCHULZE, Hans-Joachim, BABURSKE, Roman, LUTZ, Josef

Volltext

Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept von Basler, Thomas, Pfaffenlehner, Manfred, Felsl, Hans Peter, Niedernostheide, Franz-Josef, Pfirsch, Frank, Schulze, Hans-Joachim, Baburske, Roman, Lutz, Josef

Volltext

DUAL-GATE-LEISTUNGSHALBLEITERVORRICHTUNG UND VERFAHREN ZUM STEUERN EINERDUAL-GATE-LEISTUNGSHALBLEITERVORRICHTUNG von Baburske, Roman

Volltext bestellen