Influence of grain size and surface condition on minority-carrier lifetime in undoped n -BaSi2 on Si(111) von Takabe, Ryota, Hara, Kosuke O., Baba, Masakazu, Du, Weijie, Shimada, Naoya, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi

Volltext

First-principles study of twin grain boundaries in epitaxial BaSi2 on Si(111) von Baba, Masakazu, Kohyama, Masanori, Suemasu, Takashi

Volltext

Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications von Du, Weijie, Baba, Masakazu, Toko, Kaoru, Hara, Kosuke O., Watanabe, Kentaro, Sekiguchi, Takashi, Usami, Noritaka, Suemasu, Takashi

Volltext

p-BaSi2/n-Si heterojunction solar cells with conversion efficiency reaching 9.0 von Tsukahara, Daichi, Yachi, Suguru, Takeuchi, Hiroki, Takabe, Ryota, Du, Weijie, Baba, Masakazu, Li, Yunpeng, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi

Volltext

Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS von Kobayashi, Yusuke, Baba, Masakazu, Harada, Shinsuke, Kumazawa, Teruaki, Okada, Masakazu

Volltext

Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique von Baba, Masakazu, Toh, Katsuaki, Toko, Kaoru, Saito, Noriyuki, Yoshizawa, Noriko, Jiptner, Karolin, Sekiguchi, Takashi, Hara, Kosuke O., Usami, Noritaka, Suemasu, Takashi

Volltext

Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells von Du, Weijie, Suzuno, Mitsushi, Ajmal Khan, M., Toh, Katsuaki, Baba, Masakazu, Nakamura, Kotaro, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi

Volltext

N-type doping of BaSi2 epitaxial films by arsenic ion implantation through a dose-dependent carrier generation mechanism von HARA, Kosuke O, USAMI, Noritaka, BABA, Masakazu, TOKO, Kaoru, SUEMASU, Takashi

Volltext

Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells von Ajmal Khan, M., Hara, Kosuke O., Nakamura, Kotaro, Du, Weijie, Baba, Masakazu, Toh, Katsuaki, Suzuno, Mitsushi, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi

Volltext

Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy von Baba, Masakazu, Tsurekawa, Sadahiro, Watanabe, Kentaro, Du, W., Toko, Kaoru, Hara, Kosuke O., Usami, Noritaka, Sekiguchi, Takashi, Suemasu, Takashi

Volltext

Potential variation around grain boundaries in BaSi2 films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy von Baba, Masakazu, Hara, Kosuke O., Tsukahara, Daichi, Toko, Kaoru, Usami, Noritaka, Sekiguchi, Takashi, Suemasu, Takashi

Volltext

Diffusion coefficients of impurity atoms in BaSi2 epitaxial films grown by molecular beam epitaxy von Zhang, Ning, Nakamura, Kotaro, Baba, Masakazu, Toko, Kaoru, Suemasu, Takashi

Volltext

Hard x-ray photoelectron spectroscopy study on valence band structure of semiconducting BaSi2 von Baba, Masakazu, Ito, Keita, Du, Weijie, Sanai, Tatsunori, Okamoto, Kazuaki, Toko, Kaoru, Ueda, Shigenori, Imai, Yoji, Kimura, Akio, Suemasu, Takashi

Volltext

Mechanism of strain relaxation in BaSi2 epitaxial films on Si(111) substrates during post-growth annealing and application for film exfoliation von Hara, Kosuke O., Usami, Noritaka, Nakamura, Kotaro, Takabe, Ryouta, Baba, Masakazu, Toko, Kaoru, Suemasu, Takashi

Volltext

Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET With Higher Schottky Barrier Height Metal von Aiba, Ruito, Matsui, Kevin, Baba, Masakazu, Harada, Shinsuke, Yano, Hiroshi, Iwamuro, Noriyuki

Volltext

Size-exclusion chromatography using self-organized nanopores in anodic porous alumina von Sano, Tohru, Iguchi, Noriyuki, Iida, Kazuhiro, Sakamoto, Toshitsugu, Baba, Masakazu, Kawaura, Hisao

Volltext

Fabrication and characterization of BaSi2 epitaxial films over 1 µm in thickness on Si(111) von Takabe, Ryouta, Nakamura, Kotaro, Baba, Masakazu, Du, Weiji, Khan, M. Ajmal, Toko, Kaoru, Sasase, Masato, Hara, Kosuke O., Usami, Noritaka, Suemasu, Takashi

Volltext

First-principles study of twin grain boundaries in epitaxial BaSi{sub 2} on Si(111) von Baba, Masakazu, Suemasu, Takashi, Kohyama, Masanori

Volltext

High-throughput and high-resolution two dimensional mapping of pI and m/z using a microchip in a matrix-assisted laser desorption/ionization time-of-flight mass spectrometer von Fujita, Machiko, Hattori, Wataru, Sano, Tohru, Baba, Masakazu, Someya, Hiroko, Miyazaki, Kenji, Kamijo, Ken'ichi, Takahashi, Katsutoshi, Kawaura, Hisao

Volltext

Behavior of Shockley-Type Stacking Faults in SiC Superjunction MOSFET under Body Diode Current Stress von Baba, Masakazu, Okada, Masakazu, Tanaka, Takanori, Tomohisa, Shingo, Harada, Shinsuke, Watanabe, Hiroshi, Yamashiro, Yusuke, Yamaguchi, Hiroshi, Kojima, Kazutoshi

Volltext