Silicon trench photodiodes on a wafer for efficient X-ray-to-current signal conversion using side-X-ray-irradiation mode von Ariyoshi, Tetsuya, Takane, Yuta, Iwasa, Jumpei, Sakamoto, Kenji, Baba, Akiyoshi, Arima, Yutaka

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X-ray-to-current signal conversion characteristics of trench-structured photodiodes for direct-conversion-type silicon X-ray sensor von Ariyoshi, Tetsuya, Funaki, Shota, Sakamoto, Kenji, Baba, Akiyoshi, Arima, Yutaka

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Reduced operating temperature of active layer Si covered by nanocrystalline diamond film von Duangchan, Sethavut, Koishikawa, Yusuke, Shirahama, Ryouya, Oishi, Koichiro, Baba, Akiyoshi, Matsumoto, Satoshi, Hasegawa, Masataka

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Piezoelectric MEMS wideband acoustic sensor coated by organic film von Kuchiji, Hiroyuki, Masumoto, Naoki, Baba, Akiyoshi

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Side-Illuminated Color Photosensor von Ariyoshi, Tetsuya, Baba, Akiyoshi, Arima, Yutaka

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Improved Near-Infrared Sensitivity with a Side-Illuminated Photosensor von Ariyoshi, Tetsuya, Uryu, Noriyuki, Baba, Akiyoshi, Arima, Yutaka

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An efficient polishing process for silicon carbide using ion implantation method von Takitani, Sho, Baba, Akiyoshi, Nishizawa, Hideaki, Suzuki, Keisuke

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Dependence of sensitivity loss on organic film thickness and influence of cantilever warpage in a piezoelectric wideband acoustic sensor coated with an organic film von Kuchiji, Hiroyuki, Masumoto, Naoki, Morishita, Kota, Hasegawa, Shunta, Suzuki, Takaaki, Baba, Akiyoshi

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Fabrication of Micro Field Emitter Tip Using Ion-Beam Irradiation-Induced Self-Standing of Thin Films von Yoshida, Tomoya, Baba, Akiyoshi, Asano, Tanemasa

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Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization von Ishida, Yuji, Hakiai, Kazunori, Baba, Akiyoshi, Asano, Tanemasa

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Fabrication of a Gated Cold Cathode Using the Inkjet Embedding Method von Baba, Akiyoshi, Asano, Tanemasa

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Electrostatic Droplet Ejection Using Planar Needle Inkjet Head von Hakiai, Kazunori, Ishida, Yuji, Baba, Akiyoshi, Asano, Tanemasa

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Fabrication of silicon-on-diamond substrate with an ultrathin SiO2 bonding layer von Nagata, Masahiro, Shirahama, Ryouya, Duangchan, Sethavut, Baba, Akiyoshi

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Imprint Lithography Using Triple-Layer-Resist and Its Application to Metal-Oxide-Silicon Field-Effect-Transisor Fabrication von Hiroyuki Nakamura, Hiroyuki Nakamura, Akiyoshi Baba, Akiyoshi Baba, Tanemasa Asano, Tanemasa Asano

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High-performance vertical Si PiN diode by hole remaining mechanism von Tsukuda, Masanori, Baba, Akiyoshi, Shiba, Yuji, Omura, Ichiro

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Field Emission from an Ion-Beam-Modified Polyimide Film von Akiyoshi Baba, Akiyoshi Baba, Katsuya Higa, Katsuya Higa, Tanemasa Asano, Tanemasa Asano

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Fabrication of silicon-on-diamond substrate with an ultrathin SiO 2 bonding layer von Nagata, Masahiro, Shirahama, Ryouya, Duangchan, Sethavut, Baba, Akiyoshi

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Fabrication of silicon-on-diamond substrate with an ultrathin SiO^sub 2^ bonding layer von Nagata, Masahiro, Shirahama, Ryouya, Duangchan, Sethavut, Baba, Akiyoshi

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Field Electron Emission from Inkjet-Printed Carbon Black von Baba, Akiyoshi, Yoshida, Tomoya, Matsuzaki, Kazunari, Ishida, Yuji, Asano, Tanemasa

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Fabrication of Carbon-Based Field Emitters Using Stamp Technology von Akiyoshi Baba, Akiyoshi Baba, Masafumi Hizukuri, Masafumi Hizukuri, Masakazu Iwamoto, Masakazu Iwamoto, Tanemasa Asano, Tanemasa Asano

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