In situ TEM study of κ→β and κ→γ phase transformations in Ga2O3 von Cora, I., Fogarassy, Zs, Fornari, R., Bosi, M., Rečnik, A., Pécz, B.

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Thermal stability of ε-Ga2O3 polymorph von Fornari, R., Pavesi, M., Montedoro, V., Klimm, D., Mezzadri, F., Cora, I., Pécz, B., Boschi, F., Parisini, A., Baraldi, A., Ferrari, C., Gombia, E., Bosi, M.

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Superconductivity in laser-annealed monocrystalline silicon films: The role of boron implant von Dumas, P., Opprecht, M., Kerdilès, S., Lábár, J., Pécz, B., Lefloch, F., Nemouchi, F.

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Enhancing superconductivity in CoSi2 films with laser annealing von Dumas, P., Gustavo, F., Opprecht, M., Freychet, G., Gergaud, P., Kerdilès, S., Guillemin, S., Lábár, J. L., Pécz, B., Lefloch, F., Nemouchi, F.

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Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN von Giannazzo, F., Panasci, S.E., Schilirò, E., Greco, G., Roccaforte, F., Sfuncia, G., Nicotra, G., Cannas, M., Agnello, S., Frayssinet, E., Cordier, Y., Michon, A., Koos, A., Pécz, B.

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Anomalous effect of ion velocity on track formation in GeS von Szenes, G., Pécz, B.

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Realization of Vertical and Zigzag Single Crystalline Silicon Nanowire Architectures von Sivakov, V. A, Brönstrup, G, Pecz, B, Berger, A, Radnoczi, G. Z, Krause, M, Christiansen, S. H

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Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films von Panasci, S.E., Schilirò, E., Koos, A., Nemeth, M., Cannas, M., Agnello, S., Roccaforte, F., Pécz, B., Giannazzo, F.

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Graphene integration with nitride semiconductors for high power and high frequency electronics von Giannazzo, F., Fisichella, G., Greco, G., La Magna, A., Roccaforte, F., Pecz, B., Yakimova, R., Dagher, R., Michon, A., Cordier, Y.

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Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride von Roccaforte, F., Giannazzo, F., Alberti, A., Spera, M., Cannas, M., Cora, I., Pécz, B., Iucolano, F., Greco, G.

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Semitransparent and conductive CaSi2 films for silicon device applications von Galkin, Nikolay G, Galkin, Konstantin N, Tupkalo, Andrei V, Chusovitin, Evgenii A, Goroshko, Dmitrii L, Fogarassi, Z, Pecz, B

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Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs von Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., Kuzmík, J.

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Nanosecond laser annealing: Impact on superconducting silicon on insulator monocrystalline epilayers von Baron, Y., Lábár, J. L., Lequien, S., Pécz, B., Daubriac, R., Kerdilès, S., Acosta Alba, P., Marcenat, C., Débarre, D., Lefloch, F., Chiodi, F.

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Highly conductive epitaxial ZnO layers deposited by atomic layer deposition von Baji, Zs, Lábadi, Z., Molnár, Gy, Pécz, B., Vad, K., Horváth, Z.E., Szabó, P.J., Nagata, T., Volk, J.

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Structural characterization of nanostructures grown by Ni metal induced lateral crystallization of amorphous-Si von Radnóczi, G. Z., Dodony, E., Battistig, G., Vouroutzis, N., Kavouras, P., Stoemenos, J., Frangis, N., Kovács, A., Pécz, B.

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Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition von Bosi, M, Attolini, G, Negri, M, Ferrari, C, Buffagni, E, Frigeri, C, Calicchio, M, Pcz, B, Riesz, F, Cora, I, Osvth, Z, Jiang, L, Borionetti, G

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Post-metallization annealing and photolithography effects in p-type Ge/Al2O3/Al MOS structures von Ioannou-Sougleridis, V., Alafakis, S., Pécz, B., Velessiotis, D., Vouroutzis, N. Z., Ladas, S., Barozzi, M., Pepponi, G., Skarlatos, D.

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The Effect of Heavy Cosmic-Ray Ions on Silicate Grains in the Interstellar Dust von Szenes, G, Kovács, V. K, Pécz, B, Skuratov, V

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Determination of the thickness distribution of a graphene layer grown on a 2″ SiC wafer by means of Auger electron spectroscopy depth profiling von Kotis, L., Gurban, S., Pecz, B., Menyhard, M., Yakimova, R.

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Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates von Tsiaoussis, I., Khranovskyy, V., Dimitrakopulos, G. P., Stoemenos, J., Yakimova, R., Pecz, B.

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