SIMS analyses of ultra-low-energy B ion implants in Si: Evaluation of profile shape and dose accuracy von Magee, C.W., Hockett, R.S., Büyüklimanli, T.H., Abdelrehim, I., Marino, J.W.

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Maximum Active Concentration of Ion-Implanted Phosphorus During Solid-Phase Epitaxial Recrystallization von Suzuki, Kunihiro, Tada, Yoko, Kataoka, Yuji, Kawamura, Kazuo, Nagayama, Tsutomu, Nagayama, Susumu, Magee, Charles W., Buyuklimanli, Temel H., Mueller, Dominik Christoph, Fichtner, Wolfgang, Zechner, Christoph

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Estimating lateral straggling of boron profiles ion implanted into crystalline silicon with a tilt angle of 0° using off-angle substrates von SUZUKI, Kunihiro, TANAHASHI, Katsuto, NAGAYAMA, Susumu, MAGEE, Charles W, BÜYÜKLIMANLI, Temel H, IWAMOTO, Eiji

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Estimating lateral straggling of boron profiles ion implanted into crystalline silicon with a tilt angle of 0/spl deg/ using off-angle substrates von Suzuki, K., Tanahashi, K., Nagayama, S., Magee, C.W., Buyuklimanli, T.H., Iwamoto, E.

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