Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices von Tomm, J. W., Müller, R., Bärwolff, A., Elsaesser, T., Lorenzen, D., Daiminger, F. X., Gerhardt, A., Donecker, J.

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Aging properties of high power laser diode arrays analyzed by Fourier-transform photocurrent measurements von Tomm, J. W., Jaeger, A., Bärwolff, A., Elsaesser, T., Gerhardt, A., Donecker, J.

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Facet degradation of high-power diode laser arrays von TOMM, J. W, THAMM, E, BÄRWOLFF, A, ELSAESSER, T, LUFT, J, BAEUMLER, M, MUELLER, S, JANTZ, W, RECHENBERG, I, ERBERT, G

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Emitter failure and thermal facet load in high-power laser diode arrays von PUCHERT, R, TOMM, J. W, JAEGER, A, BÄRWOLFF, A, LUFT, J, SPÄTH, W

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Measurement of mounting-induced strain and defects in high-power laser diodes using Fourier-transform photo-current spectroscopy von Gerhardt, A, Tomm, J.W, Müller, R, Bärwolff, A, Lorenzen, D, Donecker, J

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Facet heating and axial temperature profiles in high-power GaAlAs/GaAs laser diodes von Menzel, U., Puchert, R., Bärwolff, A., Lau, A.

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Modelling the temperature dependence of threshold current, external differential efficiency and lasing wavelength in QW laser diodes von Menzel, U, Barwolff, A, Enders, P, Ackermann, D, Puchert, R, Voss, M

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Time-resolved emission studies of GaAs/AlGaAs laser diode arrays on different heat sinks von Voss, M., Lier, C., Menzel, U., Bärwolff, A., Elsaesser, T.

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Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence von Maaßdorf, A., Gramlich, S., Richter, E., Brunner, F., Weyers, M., Tränkle, G., Tomm, J. W., Mazur, Y. I., Nickel, D., Malyarchuk, V., Günther, T., Lienau, Ch, Bärwolff, A., Elsaesser, T.

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Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes von Tomm, J. W., Müller, R., Bärwolff, A., Elsaesser, T., Gerhardt, A., Donecker, J., Lorenzen, D., Daiminger, F. X., Weiß, S., Hutter, M., Kaulfersch, E., Reichl, H.

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Gigahertz switching behavior of polarization-bistable InGaAsP/InP lasers under high-frequency current modulation von Klehr, A., Müller, R, Voss, M., Bärwolff, A.

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Deep level spectroscopy of high-power laser diode arrays von Tomm, J. W., Bärwolff, A., Jaeger, A., Elsaesser, T., Bollmann, J., Masselink, W. T., Gerhardt, A., Donecker, J.

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Facet and bulk heating of GaAs/AlGaAs high-power laser arrays studied in spatially resolved emission and micro-Raman experiments von Puchert, R., Bärwolff, A., Menzel, U., Lau, A., Voss, M., Elsaesser, T.

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Monitoring of aging properties of AlGaAs high-power laser arrays von Tomm, J. W., Bärwolff, A., Menzel, U., Voss, M., Puchert, R., Elsaesser, Th, Daiminger, F. X., Heinemann, S., Luft, J.

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Selective excitation and photoinduced bleaching of defects in InAlGaAs/GaAs high-power diode lasers von Tomm, J. W., Bärwolff, A., Elsaesser, T., Luft, J.

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Facet heating in high power GaAlAs/GaAs edge emitting laser diodes von Menzel, U., Puchert, R., Barwolff, A., Lau, A.

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Lattice parameter variation in inp related to the dopant element and doping level von Knauer, A., Kräusslich, J., Kittner, R., Staske, R., Bärwolff, A.

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Failure Distribution on Semiconductor Wafers von Kopelmann, A., Enders, P., Knauer, A., Bärwolff, A.

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Transient thermal behavior of high power diode laser arrays von Puchert, R., Barwolff, A., Voss, M., Menzel, U., Tomm, J.W., Luft, J.

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Spectroscopic measurement of mounting-induced strain in optoelectronic devices von Barwolff, A., Tomm, J.W., Muller, R., Weiss, S., Hutter, M., Oppermann, H., Reichl, H.

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