Etch mechanism of an Al2O3 hard mask in the Bosch process von Drost, Martin, Marschmeyer, Steffen, Fraschke, Mirko, Fursenko, Oksana, Bärwolf, Florian, Costina, Ioan, Mahadevaiah, Mamathamba Kalishettyhalli, Lisker, Marco

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Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes von You, Tiangui, Ou, Xin, Niu, Gang, Bärwolf, Florian, Li, Guodong, Du, Nan, Bürger, Danilo, Skorupa, Ilona, Jia, Qi, Yu, Wenjie, Wang, Xi, Schmidt, Oliver G., Schmidt, Heidemarie

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Enhancing device performance with high electron mobility GeSn materials von Junk, Yannik, Concepción, Omar, Frauenrath, Marvin, Sun, Jingxuan, Bae, Jin Hee, Bärwolf, Florian, Mai, Andreas, Hartmann, Jean‐michel, Grützmacher, Detlev, Buca, Dan, Zhao, Qing‐tai

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Fabrication of Highly n‑Type-Doped Germanium Nanowires and Ohmic Contacts Using Ion Implantation and Flash Lamp Annealing von Echresh, Ahmad, Prucnal, Slawomir, Li, Zichao, Hübner, René, Ganss, Fabian, Steuer, Oliver, Bärwolf, Florian, Jazavandi Ghamsari, Shima, Helm, Manfred, Zhou, Shengqiang, Erbe, Artur, Rebohle, Lars, Georgiev, Yordan M.

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Investigation of the impact of amorphous silicon layers deposited by PECVD and HDP-CVD on oxide precipitation in silicon von Kissinger, Gudrun, Kot, Dawid, Bärwolf, Florian, Lisker, Marco

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Determination of the indirect bandgap of lattice-matched SiGeSn on Ge von Schwarz, Daniel, Kasper, Erich, Bärwolf, Florian, Costina, Ioan, Oehme, Michael

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Milliseconds Thermal Processing of Boron Hyperdoped Germanium von Cheng, Yu, Long, FangChao, Steuer, Oliver, Lambeva, Nikol, Bärwolf, Florian, Zscharschuch, Jens, Erbe, Artur, Helm, Manfred, Zhou, Shengqiang, Prucnal, Slawomir

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Investigation of Doping Processes to Achieve Highly Doped Czochralski Germanium Ingots von Subramanian, Aravind, Abrosimov, Nikolay, Gybin, Alexander, Guguschev, Christo, Juda, Uta, Fiedler, Andreas, Bärwolf, Florian, Costina, Ioan, Kwasniewski, Albert, Dittmar, Andrea, Sumathi, R. Radhakrishnan

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Toward controlling the Al 2 O 3 /ZnO interface properties by in situ ALD preparation von Janowitz, Christoph, Mahmoodinezhad, Ali, Kot, Małgorzata, Morales, Carlos, Naumann, Franziska, Plate, Paul, Zoellner, Marvin Hartwig, Bärwolf, Florian, Stolarek, David, Wenger, Christian, Henkel, Karsten, Flege, Jan Ingo

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Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry von Fursenko, Oksana, Lukosius, Mindaugas, Bauer, Joachim, Villringer, Claus, Lux, Helge, Bärwolf, Florian, Lisker, Marco, Mai, Andreas

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Toward controlling the Al2O3/ZnO interface properties by in situ ALD preparation von Janowitz, Christoph, Mahmoodinezhad, Ali, Kot, Małgorzata, Morales, Carlos, Naumann, Franziska, Plate, Paul, Marvin Hartwig Zoellner, Bärwolf, Florian, Stolarek, David, Wenger, Christian, Henkel, Karsten, Jan Ingo Flege

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Polarization-resolved Raman spectroscopy reveals the atomic local ordering in silicon germanium tin epitaxial alloys von Corley-Wiciak, Agnieszka Anna, Concepción, Omar, Zoellner, Marvin Hartwig, Sfruncia, Gianfranco, Bärwolf, Florian, Nicotra, Giuseppe, Grützmacher, Detlev, Buca, Dan, Capellini, Giovanni, Spirito, Davide

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Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy von Niu, Gang, Calka, Pauline, Huang, Peng, Sharath, Sankaramangalam Ulhas, Petzold, Stefan, Gloskovskii, Andrei, Fröhlich, Karol, Zhao, Yudi, Kang, Jinfeng, Schubert, Markus Andreas, Bärwolf, Florian, Ren, Wei, Ye, Zuo-Guang, Perez, Eduardo, Wenger, Christian, Alff, Lambert, Schroeder, Thomas

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Vertical GeSn nanowire MOSFETs for CMOS beyond silicon von Liu, Mingshan, Junk, Yannik, Han, Yi, Yang, Dong, Bae, Jin Hee, Frauenrath, Marvin, Hartmann, Jean-Michel, Ikonic, Zoran, Bärwolf, Florian, Mai, Andreas, Grützmacher, Detlev, Knoch, Joachim, Buca, Dan, Zhao, Qing-Tai

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Strain and Band-Gap Engineering in Ge - Sn Alloys via P Doping von Prucnal, Slawomir, Berencén, Yonder, Wang, Mao, Grenzer, Jörg, Voelskow, Matthias, Hübner, Rene, Yamamoto, Yuji, Scheit, Alexander, Bärwolf, Florian, Zviagin, Vitaly, Schmidt-Grund, Rüdiger, Grundmann, Marius, Żuk, Jerzy, Turek, Marcin, Droździel, Andrzej, Pyszniak, Krzysztof, Kudrawiec, Robert, Polak, Maciej P., Rebohle, Lars, Skorupa, Wolfgang, Helm, Manfred, Zhou, Shengqiang

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Toward controlling the AlO/ZnO interface properties by ALD preparation von Janowitz, Christoph, Mahmoodinezhad, Ali, Kot, Ma gorzata, Morales, Carlos, Naumann, Franziska, Plate, Paul, Zoellner, Marvin Hartwig, Bärwolf, Florian, Stolarek, David, Wenger, Christian, Henkel, Karsten, Flege, Jan Ingo

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Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing von Steuer, Oliver, Schwarz, Daniel, Oehme, Michael, Bärwolf, Florian, Cheng, Yu, Ganss, Fabian, Hübner, René, Heller, René, Zhou, Shengqiang, Helm, Manfred, Cuniberti, Gianaurelio, Georgiev, Yordan M, Prucnal, Slawomir

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Supplemental Material von Steuer, Oliver, Schwarz, Daniel, Oehme, M., Bärwolf, Florian, Cheng, Yu, Ganss, Fabian, Hübner, R., Heller, Rene, Zhou, Shengqiang, Helm, Manfred, Cuniberti, Gianaurelio, Georgiev, Yordan, Prucnal, Slawomir

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Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing von Steuer, Oliver, Schwarz, Daniel, Oehme, Michael, Bärwolf, Florian, Cheng, Yu, Ganss, Fabian, Hübner, René, Heller, René, Zhou, Shengqiang, Helm, Manfred, Cuniberti, Gianaurelio, Georgiev, Yordan M, Prucnal, Slawomir

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Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping von Prucnal, Slawomir, Berencén, Yonder, Wang, Mao, Grenzer, Jörg, Voelskow, Matthias, Hübner, Rene, Yamamoto, Yuji, Scheit, Alexander, Bärwolf, Florian, Zviagin, Vitaly, Schmidt-Grund, Rüdiger, Grundmann, Marius, Żuk, Jerzy, Turek, Marcin, Droździel, Andrzej, Pyszniak, Krzysztof, Kudrawiec, Robert, Polak, Maciej P, Rebohle, Lars, Skorupa, Wolfgang, Helm, Manfred, Zhou, Shengqiang

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