Calculation of Power Losses in Litz Wire Systems by Coupling FEM and PEEC Method von Rosskopf, Andreas, Bar, Eberhard, Joffe, Christopher, Bonse, Clemens

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Process Variability-Technological Challenge and Design Issue for Nanoscale Devices von Lorenz, Jürgen, Bär, Eberhard, Barraud, Sylvain, Brown, Andrew R, Evanschitzky, Peter, Klüpfel, Fabian, Wang, Liping

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Influence of Inner Skin- and Proximity Effects on Conduction in Litz Wires von Rosskopf, Andreas, Bar, Eberhard, Joffe, Christopher

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Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA von Bär, Eberhard, Berwian, Patrick, Kallinger, Birgit, Bayer, Christoph Friedrich

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Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: Methodology von Lorenz, Jürgen K., Bar, E., Clees, T., Jancke, R., Salzig, C. P. J., Selberherr, S.

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Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: Results von Lorenz, J. K., Bar, E., Clees, T., Evanschitzky, P., Jancke, R., Kampen, C., Paschen, U., Salzig, C. P. J., Selberherr, S.

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Performance of vertical gate-all-around nanowire p-MOS transistors determined by boron depletion during oxidation von Rossi, Chiara, Burenkov, Alexander, Pichler, Peter, Bär, Eberhard, Müller, Jonas, Larrieu, Guilhem

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Secondary ion mass spectrometry quantification of boron distribution in an array of silicon nanowires von Michałowski, Paweł Piotr, Müller, Jonas, Rossi, Chiara, Burenkov, Alexander, Bär, Eberhard, Larrieu, Guilhem, Pichler, Peter

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A fast development simulation algorithm for discrete resist models von Schnattinger, Thomas, Bär, Eberhard, Erdmann, Andreas

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Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: Results : CHARACTERIZATION OF NANO CMOS VARIABIALITY BY SIMULATION AND MEASUREMENTS von LORENZ, Jürgen K, BÄR, Eberhard, CLEES, Tanja, EVANSCHITZKY, Peter, JANCKE, Roland, KAMPEN, Christian, PASCHEN, Uwe, SALZIG, Christian P. J, SELBERHERR, Siegfried

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Modeling of block copolymer dry etching for directed self-assembly lithography von Belete, Zelalem, Bär, Eberhard, Erdmann, Andreas

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Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: Methodology : CHARACTERIZATION OF NANO CMOS VARIABIALITY BY SIMULATION AND MEASUREMENTS von LORENZ, Jürgen K, BAR, Eberhard, CLEES, Tanja, JANCKE, Roland, SALZIG, Christian P. J, SELBERHERR, Siegfried

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Process variability - technological challenge and design issue for nanoscale devices von Lorenz, Jürgen, Bär, Eberhard, Barraud, Sylvain, Brown, Andrew R, Evanschitzky, Peter, Klüpfel, Fabian, Wang, Liping

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Process variability for devices at and beyond the 7 nm node von Lorenz, Jürgen, Asenov, Asen, Bär, Eberhard, Barraud, Sylvain, Millar, Campbell, Nedjalkov, Mihail

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3-D simulation of LPCVD using segment-based topography discretization von Bar, E., Lorenz, J.

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Octahedro octahedra and tetrahedra. II. Tetra- to heptanuclear carbonyl(cyano)chromato, -molybdato and -tungstato complexes of 3d metals von Fritz, Marcus, Rieger, Dirk, Bär, Eberhard, Beck, Gerhard, Fuchs, Joachim, Holzmann, Gerhard, Fehlhammer, Wolf P.

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Variability-aware compact model strategy for 20-nm bulk MOSFETs von Wang, Xingsheng, Reid, Dave, Wang, Liping, Burenkov, Alex, Millar, Campbell, Cheng, Binjie, Lange, Andre, Lorenz, Jürgen, Bär, Eberhard, Asenov, Asen

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Simultaneous simulation of systematic and stochastic process variations von Lorenz, Jürgen, Bär, Eberhard, Burenkov, Alex, Evanschitzky, Peter, Asenov, Asen, Wang, Liping, Wang, Xingsheng, Brown, Andrew, Millar, Campbell, Reid, David

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Three-dimensional simulation for the reliability and electrical performance of through-silicon vias von Filipovic, Lado, Rudolf, Florian, Bär, Eberhard, Evanschitzky, Peter, Lorenz, Jürgen, Roger, Frederic, Singulani, Anderson, Minixhofer, Rainer, Selberherr, Siegfried

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Chemie der Isoblausäure V. Reaktionen von W(CO) 5CNH, Fe(CN) 2(CNH) 4 und [FeCp(dppe)CNH]BF 4 mit hochalkylierten Olefinen: hydroisocyanierung von Bär, Eberhard, Fehlhammer, Wolf Peter

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