Spin-orbit torque induced spike-timing dependent plasticity von Sengupta, Abhronil, Al Azim, Zubair, Fong, Xuanyao, Roy, Kaushik

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Modeling and Evaluation of Topological Insulator/Ferromagnet Heterostructure-Based Memory von Reza, Ahmed Kamal, Xuanyao Fong, Al Azim, Zubair, Roy, Kaushik

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Optical Receiver With Helicity-Dependent Magnetization Reversal von Azim, Zubair Al, Ostler, Thomas A., Xu, Chudong, Roy, Kaushik

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Skyrmion Sensor-Based Low-Power Global Interconnects von Al Azim, Zubair, Mei-Chin Chen, Roy, Kaushik

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Spin-Torque Sensors for Energy Efficient High-Speed Long Interconnects von Al Azim, Zubair, Sengupta, Abhronil, Sarwar, Syed Shakib, Roy, Kaushik

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Laser Induced Magnetization Reversal for Detection in Optical Interconnects von Al Azim, Zubair, Xuanyao Fong, Ostler, Thomas, Chantrell, Roy, Roy, Kaushik

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Capacitively Driven Global Interconnect With Energy-Efficient Receiver Based on Magneto-Electric Switching von Azim, Zubair Al, Jaiswal, Akhilesh, Chakraborty, Indranil, Roy, Kaushik

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Buffered Spin-Torque Sensors for Minimizing Delay and Energy Consumption in Global Interconnects von Azim, Zubair Al, Sharma, Ankit, Roy, Kaushik

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A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect von Chowdhury, Nadim, Ahmed, Imtiaz, Azim, Zubair Al, Alam, Md. Hasibul, Niaz, Iftikhar Ahmad, Khosru, Quazi D. M.

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Physical/process parameter dependence of gate capacitance and ballistic performance of InAsySb1−y Quantum Well Field Effect Transistors von Niaz, I. A., Alam, M. H., Ahmed, I., Al Azim, Z., Chowdhury, N., Khosru, Q. D. M.

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Spin-Orbit Torque Induced Spike-Timing Dependent Plasticity von Sengupta, Abhronil, Zubair Al Azim, Fong, Xuanyao, Kaushik, Roy

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Spin-Torque Sensors for Energy Efficient High Speed Long Interconnects von Zubair Al Azim, Sengupta, Abhronil, Syed Shakib Sarwar, Kaushik, Roy

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Laser Induced Magnetization Reversal for Detection in Optical Interconnects von Zubair Al Azim, Fong, Xuanyao, Ostler, Thomas, Chantrell, Roy, Kaushik, Roy

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A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect von Chowdhury, Nadim, Ahmed, Imtiaz, Zubair Al Azim, Alam, Md Hasibul, Iftikhar Ahmad Niaz, Khosru, Quazi D M

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Self-consistent C-V characterization of depletion mode buried channel InGaAs/InAs Quantum Well FET incorporating strain effects von Ahmed, I., Niaz, I. A., Alam, M. H., Chowdhury, N., Azim, Z. A., Mohd Khosru, Quazi Deen

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Self Consistent Simulation of C-V Characterization and Ballistic Performance of Double Gate SOI Flexible-FET Incorporating QM Effects von Zubair Al Azim, Chowdhury, Nadim, Iftikhar Ahmad Niaz, Alam, Md Hasibul, Ahmed, Imtiaz, Khosru, Quazi D M

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Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects von Ahmed, Imtiaz, Iftikhar Ahmad Niaz, Alam, Md Hasibul, Chowdhury, Nadim, Zubair Al Azim, Quazi Deen Mohd Khosru

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In_xGa_{1-x}Sb MOSFET: Performance Analysis by Self Consistent CV Characterization and Direct Tunneling Gate Leakage Current von Alam, Md Hasibul, Iftikhar Ahmad Niaz, Ahmed, Imtiaz, Zubair Al Azim, Chowdhury, Nadim, Quazi Deen Mohd Khosru

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A Physically Based Analytical Modeling of Threshold Voltage Control for Fully-Depleted SOI Double Gate NMOS-PMOS Flexible-FET von Chowdhury, Nadim, Zubair Al Azim, Ahmed, Imtiaz, Iftikhar Ahmad Niaz, Alam, Md Hasibul, Khosru, Quazi D M

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Self consistent simulation of C-V characterization and ballistic performance of double gate SOI flexible-FET incorporating QM effects von Al Azim, Zubair, Chowdhury, N., Ahmad Niaz, Iftikhar, Alam, M. H., Ahmed, I., Quazi, D. M.

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