Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures von Ayedh, H. M., Nipoti, R., Hallén, A., Svensson, B. G.

Volltext

Formation of carbon vacancy in 4H silicon carbide during high-temperature processing von Ayedh, H. M., Bobal, V., Nipoti, R., Hallén, A., Svensson, B. G.

Volltext

Electrical charge state identification and control for the silicon vacancy in 4H-SiC von Bathen, M. E., Galeckas, A., Müting, J., Ayedh, H. M., Grossner, U., Coutinho, J., Frodason, Y. K., Vines, L.

Volltext

Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species von Ayedh, H. M., Hallén, A., Svensson, B. G.

Volltext

Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect von Ayedh, H. M., Nipoti, R., Hallén, A., Svensson, B. G.

Volltext

Carbon vacancy control in p+-n silicon carbide diodes for high voltage bipolar applications von Ayedh, H M, Kvamsdal, K-E, Bobal, V, Hallén, A, Ling, F C C, Kuznetsov, A Yu

Volltext

Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment von Bathen, M. E., Coutinho, J., Ayedh, H. M., Ul Hassan, J., Farkas, I., Öberg, S., Frodason, Y. K., Svensson, B. G., Vines, L.

Volltext

Surface Erosion of Ion-Implanted 4H-SiC during Annealing with Carbon Cap von Ayedh, Hussein M., Vines, Lasse, Hallén, Anders, Svensson, Bengt Gunnar, Linnarsson, Margareta K.

Volltext

DLTS study on Al+ ion implanted and 1950°C annealed p-i-n 4H-SiC vertical diodes von Ayedh, H. M., Puzzanghera, M., Svensson, B. G., Nipoti, R.

Volltext

Formation and dissociation reactions of complexes involving interstitial carbon and oxygen defects in silicon von Ayedh, H. M., Monakhov, E. V., Coutinho, J.

Volltext

Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC von Ayedh, Hussein M., Nipoti, Roberta, Hallén, Anders, Svensson, Bengt Gunnar

Volltext

Formation of D-center in p-type 4H-SiC epi-layers during high temperature treatments von Ayedh, H. M., Iwamoto, N., Nipoti, R., Hallén, A., Svensson, B. G.

Volltext

Formation and dissociation reactions of complexes involving interstitial carbon and oxygen defects in silicon von Ayedh, H M, Monakhov, E V, Coutinho, J

Volltext

Muon Interaction with Negative-U and High-Spin-State Defects: Differentiating Between C and Si Vacancies in 4H-SiC von Woerle, Judith, Bathen, Marianne Etzelmüller, Prokscha, Thomas, Galeckas, Augustinas, Ayedh, Hussein Mohammed Hussein, Vines, Lasse, Grossner, Ulrike

Volltext

Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment von Nipoti, Roberta, Ayedh, Hussein M., Hallén, Anders, Svensson, Bengt Gunnar

Volltext

Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide von Nipoti, Roberta, Hallén, Anders, Svensson, Bengt Gunnar, Ayedh, Hussein M.

Volltext

Formation and Annihilation of Carbon Vacancies in 4H-SiC von Nipoti, Roberta, Bobal, Viktor, Ayedh, Hussein M., Hallén, Anders, Svensson, Bengt Gunnar

Volltext

Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes von Godignon, Philippe, Kicin, S., Ayedh, Hussein M., Hazdra, Pavel, Alfieri, Giovanni, Millan, José, Svensson, Bengt Gunnar, Mihaila, Andrei

Volltext

(Invited) Controlling the Carbon Vacancy in 4H-SiC by Thermal Processing von Ayedh, Hussein M., Baathen, Marianne E., Galeckas, Augustinas, Hassan, Jawad Ul, Bergman, J. P., Nipoti, Roberta, Hallen, Anders, Svensson, Bengt G

Volltext

Precise modeling of lithium-ion battery in industrial applications using Walrus optimization algorithm von Fahmy, Hend M., Alqahtani, Ayedh H., Hasanien, Hany M.

Volltext