6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm von Aydaraliev, M., Zotova, N. V., Karandashov, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N., Bewley, W. W., Lindle, J. R., Meyer, J. R.

Volltext

Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys von Aydaraliev, M, Zotova, N V, Karandashov, S A, Matveev, B A, Stus', N M, Talalakin, G N

Volltext

High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.3 µm) von Aydaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.

Volltext

Radiation recombination in InAsSb/InAsSbP double heterostructures von Aydaraliev, M, Bresler, M S, Gusev, O B, Karandashov, S A, Matveev, B A, Stus, M N, Talalakin, G N, Zotova, N V

Volltext

InAs-based laser double heterostructures with p-n junction in the active region von Bresler, M.S., Gusev, O.B., Zotova, N.V., Aydaraliev, M., Karandashev, S.A., Matveev, B.A., Stus', N.M., Talalakin, G.N.

Volltext

Radiation recombination in InAsSb/InAsSbP double heterostructures von AYDARALIEV, M, BRESLER, M. S, GUSEV, O. B, KARANDASHOV, S. A, MATVEEV, B. A, STUS', M. N, TALALAKIN, G. N, ZOTOVA, N. V

Volltext

Low-threshold long-wave lasers (λ=3.0-3.6 μm) based on III-V alloys von AYDARALIEV, M, ZOTOVA, N. V, KARANDASHOV, S. A, MATVEEV, B. A, STUS', N. M, TALALAKIN, G. N

Volltext