Latent interface-trap buildup and its implications for hardness assurance (MOS transistors) von Schwank, J.R., Fleetwood, D.M., Shaneyfelt, M.R., Winokur, P.S., Axness, C.L., Riewe, L.C.

Volltext

Modeling the time-dependent transient radiation response of semiconductor junctions von Wunsch, T.F., Axness, C.L.

Volltext

SEU simulation and testing of resistor-hardened D-latches in the SA3300 microprocessor von Sexton, F.W., Corbett, W.T., Treece, R.K., Hass, K.J., Hughes, K.L., Axness, C.L., Hash, G.L., Shaneyfelt, M.R., Wunsch, T.F.

Volltext

Radiation characteristics of SIPOS and polysilicon resistors von Axness, C.L., Riewe, L., Reber, R.A., Liang, A.Y., Ang, S.S., Brown, W.D.

Volltext

Memory SEU simulations using 2-D transport calculations von Fu, J.S., Axness, C.L., Weaver, H.T.

Volltext

SEU characterization and design dependence of the SA3300 microprocessor von Sexton, F.W., Treece, R.K., Hass, K.J., Hughes, K.L., Hash, G.L., Axness, C.L., Buchner, S.P., Kang, K.

Volltext

RAM cell recovery mechanisms following high-energy ion strikes von Weaver, H.T., Axness, C.L., Fu, J.S., Binkley, J.S., Mansfield, J.

Volltext

A proposed new structure for SEU immunity in SRAM employing drain resistance von Ochoa, A., Axness, C.L., Weaver, H.T., Fu, J.S.

Volltext

Single event upset in irradiated 16 K CMOS SRAMs von Axness, C.L., Schwank, J.R., Winokur, P.S., Browning, J.S., Koga, R., Fleetwood, D.M.

Volltext

Single Event Upset In CMOS Static Ram And Latches von Axness, C.L., Weaver, H.T., Giddings, A.E., Shafer, B.D.

Volltext bestellen