Application of positron beam Doppler broadening technique to ion beam irradiation in nickel von Iwai, Takeo, Tsuchida, Hidetsugu, Awano, Misa

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Observation of transient lattice vacancies produced during high-energy ion irradiation of Ni foils von Tsuchida, Hidetsugu, Iwai, Takeo, Awano, Misa, Kishida, Mutsumi, Katayama, Ichiro, Jeong, Sun-Chang, Ogawa, Hidemi, Sakamoto, Naoki, Komatsu, Masao, Itoh, Akio

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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME von AWANO MISA

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Semiconductor device including a halo layer and method of fabricating the same von Awano, Misa

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Semiconductor device including a halo layer and method of fabricating the same von AWANO MISA

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME von AWANO MISA

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SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT von AWANO MISA

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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME von AWANO MISA

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28aTA-13 Observation of lattice vacancies produced during ion irradiation in the damage region by variable-energy positron beams von Awano, Misa, Tsuchida, Hidetsugu, Iwai, Takeo, Itoh, Akio, Katayama, Ichiro, Jeong, Sun-Chan, Sakamoto, Naoki, Ogawa, Hidemi

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28aTA-13 エネルギー可変陽電子ビームによるイオン照射中に観測した欠陥生成領域の空孔(28aTA 放射線物理,領域1(原子・分子,量子エレクトロニクス,放射線物理))... von 粟野, 実佐, 土田, 秀次, 岩井, 岳夫, 伊藤, 秋男, 片山, 一郎, 鄭, 淳讃, 坂本, 直樹, 小川, 英巳

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