PHARMACOECONOMIC EVALUATION OF RIBOCICLIB FOR THE FIRST-LINE TREATMENT OF HR-POSITIVE HER2-NEGATIVE ADVANCED BREAST CANCER von Avksentyev, N. A., Zhuravleva, M. V., Pazukhina, E. M., Snegovoy, A. V., Frolov, M. Yu

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SOCIAL AND ECONOMIC BURDEN OF FIVE NATURAL FOCAL INFECTIONS IN THE RUSSIAN FEDERATION von Platonov, A.E., Avksentyev, N.A., Avksentyeva, M.V., Derkach, E.V., Platonova, O.V., Titkov, A.V., Kolyasnikova, N.M.

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Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels von Vitusevich, S. A., Danylyuk, S. V., Klein, N., Petrychuk, M. V., Avksentyev, A. Yu, Sokolov, V. N., Kochelap, V. A., Belyaev, A. E., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

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Effects of γ-irradiation on AlGaN/GaN-based HEMTs von Vitusevich, S. A., Klein, N., Belyaev, A. E., Danylyuk, S. V., Petrychuk, M. V., Konakova, R. V., Kurakin, A. M., Rengevich, A. E., Avksentyev, A. Yu, Danilchenko, B. A., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

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High Temperature Contacts to GaN and SiC Based on TiBx Nanostructure Layers von Boltovets, Mykola S., Belyaev, A.E., Sachenko, A.V., Konakova, Raisa V., Avksentyev, A.Yu, Sveschnikov, Yu.N., Borisenko, A.G., Lytvyn, Petr M., Fedorovitsh, O.A., Ivanov, V.N., Milenin, Victor V., Kudryk, Ya.Ya

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Hot-electron transport in III-V nitride based two-dimensional gases von Vitusevich, S. A., Danylyuk, S. V., Danilchenko, B. A., Klein, N., Zelenskyi, S. E., Budnik, A. P., Didenko, R. V., Avksentyev, A. Yu, Sokolov, V. N., Lüth, H., Kochelap, V. A., Belyaev, A. E.

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Two-Dimensional Electron Dynamics in GaN/AlGaN Heterostructures von Vitusevich, S.A., Danylyuk, S.V., Klein, N., Petrychuk, M.V., Avksentyev, A.Yu, Sokolov, V.N., Kochelap, V.A., Belyaev, A.E., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L.F.

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Ultra-high field transport in GaN-based heterostructures von Vitusevich, S. A.

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Low-Frequency Noise in AlGaN/GaN High Electron Mobility Transistors Irradiated by γ-Ray Quanta von Vitusevich, S.A., Klein, N., Petrychuk, M.V., Belyaev, A.E., Danylyuk, S.V., Konakova, R.V., Avksentyev, A.Yu, Danilchenko, B.A., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L.F.

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Effects of g-irradiation on AlGaN/GaN-based HEMTs von Vitusevich, S A, Klein, N, Belyaev, A E, Danylyuk, S V, Petrychuk, M V, Konakova, R V, Kurakin, A M, Rengevich, A E, Avksentyev, A Y, Danilchenko, B A, Tilak, V, Smart, J, Vertiatchikh, A, Eastman, L F

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Effects of g-irradiation on AlGaN/GaN-based HEMTs von Vitusevich, S A, Klein, N, Belyaev, A E, Danylyuk, S V, Petrychuk, M V, Konakova, R V, Kurakin, A M, Rengevich, A E, Avksentyev, A Y, Danilchenko, B A, Tilak, V, Smart, J, Vertiatchikh, A, Eastman, L F

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The effect of gamma-irradiation on the operating parameters of group III nitrides-based field effect transistors von Belyaev, A.E., Konakova, R.V., Petrychuk, M.V., Avksentyev, A.Yu, Kurakin, A.M., Vitusevich, S.A., Klein, N., Danylyuk, S.V., Danylchenko, B.A.

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Ultra-high electric field transport in GaN-based heterostructures von Vitusevich, S.A., Danylyuk, S.V., Danilchenko, B.A., Klein, N., Zelenskyi, S.E., Budnik, A.P., Avksentyev, A.Yu, Sokolov, V.N., Kochelap, V.A., Belyaev, A.E., Petrychuk, M.V., Luth, H.

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