Formation of GaAs and Ga1−xAlxAs (0 ≤ x ≤ 0.3) layers on GaAs (111)A substrate by organometallic vapor phase epitaxy von Larkin, S, Avksentyev, A, Vakiv, M, Krukovsky, R, Kost, Y, Mykhashchuk, Y, Krukovsky, S, Saldan, I

Volltext

The Great Emch Closure Theorem and a combinatorial proof of Poncelet's Theorem von Avksentyev, E. A.

Volltext

Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels von Vitusevich, S. A., Danylyuk, S. V., Klein, N., Petrychuk, M. V., Avksentyev, A. Yu, Sokolov, V. N., Kochelap, V. A., Belyaev, A. E., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

Volltext

A universal measure for a pencil of conics and the Great Poncelet Theorem von Avksentyev, E. A.

Volltext

PHARMACOECONOMIC EVALUATION OF RIBOCICLIB FOR THE FIRST-LINE TREATMENT OF HR-POSITIVE HER2-NEGATIVE ADVANCED BREAST CANCER von Avksentyev, N. A., Zhuravleva, M. V., Pazukhina, E. M., Snegovoy, A. V., Frolov, M. Yu

Volltext

Effects of γ-irradiation on AlGaN/GaN-based HEMTs von Vitusevich, S. A., Klein, N., Belyaev, A. E., Danylyuk, S. V., Petrychuk, M. V., Konakova, R. V., Kurakin, A. M., Rengevich, A. E., Avksentyev, A. Yu, Danilchenko, B. A., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

Volltext

Formation of GaAs and Ga 1−x Al x As (0 ≤ x ≤ 0.3) layers on GaAs (111)A substrate by organometallic vapor phase epitaxy von Larkin, S, Avksentyev, A, Vakiv, M, Krukovsky, R, Kost, Y, Mykhashchuk, Y, Krukovsky, S, Saldan, I

Volltext

Formation of GaAs and Ga sub(1-x)Al sub(x)As (0 [< or =, slant] x [< or =, slant] 0.3) layers on GaAs (111)A substrate by organometallic vapor phase epitaxy von Larkin, S, Avksentyev, A, Vakiv, M, Krukovsky, R, Kost, Y, Mykhashchuk, Y, Krukovsky, S, Saldan, I

Volltext

Universal measure for Poncelet-type theorems von Avksentyev, Evgeny A., Protasov, Vladimir Yu

Volltext

“Identities Portfolio” of the Youth of the Southern Russia after 12 Years von Avksentyev, V A, Aksyumov, B V

Volltext

Hot-electron transport in III-V nitride based two-dimensional gases von Vitusevich, S. A., Danylyuk, S. V., Danilchenko, B. A., Klein, N., Zelenskyi, S. E., Budnik, A. P., Didenko, R. V., Avksentyev, A. Yu, Sokolov, V. N., Lüth, H., Kochelap, V. A., Belyaev, A. E.

Volltext

High Temperature Contacts to GaN and SiC Based on TiBx Nanostructure Layers von Boltovets, Mykola S., Borisenko, A.G., Belyaev, A.E., Sachenko, A.V., Kudryk, Ya.Ya, Milenin, Victor V., Lytvyn, Petr M., Ivanov, V.N., Avksentyev, A.Yu, Fedorovitsh, O.A., Konakova, Raisa V., Sveschnikov, Yu.N.

Volltext

Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization von Naumov, A. V.

Volltext

SOCIAL AND ECONOMIC BURDEN OF FIVE NATURAL FOCAL INFECTIONS IN THE RUSSIAN FEDERATION von Platonov, A.E., Avksentyev, N.A., Avksentyeva, M.V., Derkach, E.V., Platonova, O.V., Titkov, A.V., Kolyasnikova, N.M.

Volltext

Feuerbach's and Poncelet's theorems meet in space von Avksentyev, Evgeny A

Volltext bestellen

Feuerbach's and Poncelet's theorems meet in space von Avksentyev, Evgeny A

Volltext

The investigation of properties of electron transport in AlGaN/GaN heterostructures von Danylyuk, S.V., Vitusevich, S.A., Podor, B., Belyaev, A.E., Avksentyev, A.Yu, Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L.F.

Volltext

Universal measure for Poncelet-type theorems von Avksentyev, Evgeny A, Protasov, Vladimir Yu

Volltext bestellen

Ultra-high field transport in GaN-based heterostructures von Vitusevich, S. A.

Volltext

Two-Dimensional Electron Dynamics in GaN/AlGaN Heterostructures von Vitusevich, S.A., Danylyuk, S.V., Klein, N., Petrychuk, M.V., Avksentyev, A.Yu, Sokolov, V.N., Kochelap, V.A., Belyaev, A.E., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L.F.

Volltext