Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM von Autran, J.L., Roche, P., Sauze, S., Gasiot, G., Munteanu, D., Loaiza, P., Zampaolo, M., Borel, J.

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Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study von Nehari, K., Cavassilas, N., Autran, J.L., Bescond, M., Munteanu, D., Lannoo, M.

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3D Quantum Numerical Simulation of Single-Event Transients in Multiple-Gate Nanowire MOSFETs von Munteanu, D., Autran, J.L., Ferlet-Cavrois, V., Paillet, P., Baggio, J., Castellani, K.

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Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices von Munteanu, D., Autran, J.L.

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Investigation of 30 nm Gate-All-Around MOSFET Sensitivity to Heavy Ions: A 3-D Simulation Study von Castellani-Coulie, K., Munteanu, D., Autran, J.L., Ferlet-Cavrois, V., Paillet, P., Baggio, J.

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Electronics reliability assessment of future power fusion machines: Neutron interaction analysis in bulk silicon von Autran, J.L., Munteanu, D.

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Basic single-event mechanisms in Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons von Munteanu, D., Moindjie, S., Autran, J.L.

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Simulation analysis of the bipolar amplification induced by heavy-ion irradiation in double-gate MOSFETs von Castellani-Coulie, K., Munteanu, D., Autran, J.L., Ferlet-Cavrois, V., Paillet, P., Baggio, J.

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Impact of total ionizing dose on the alpha-soft error rate in FDSOI 28 nm SRAMs von Moindjie, S., Munteanu, D., Autran, J.L., Malherbe, V., Gasiot, G., Roche, P.

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A water tank muon spectrometer for the characterization of low energy atmospheric muons von Munteanu, D., Moindjie, S., Autran, J.L.

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Capacitance non-linearity study in Al2O3 MIM capacitors using an ionic polarization model von BECU, S, CREMER, S, AUTRAN, J. L

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Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks von HOUSSA, M, DE JAEGER, B, DELABIE, A, VAN ELSHOCHT, S, AFANAS'EV, V. V, AUTRAN, J. L, STESMANS, A, MEURIS, M, HEYNS, M. M

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Characterization of atmospheric muons at sea level using a cosmic ray telescope von Autran, J.L., Munteanu, D., Saad Saoud, T., Moindjie, S.

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Analysis of 45-nm Multi-Gate Transistors Behavior Under Heavy Ion Irradiation by 3-D Device Simulation von Castellani-Coulie, K., Munteanu, D., Autran, J.L., Ferlet-Cavrois, V., Paillet, P., Baggio, J.

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Terrestrial neutron-induced single events in GaN von Munteanu, D., Autran, J.L.

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Impact of high-permittivity dielectrics on speed performances and power consumption in double-gate-based CMOS circuits von Loussier, X., Munteanu, D., Autran, J.L.

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Modelling and simulation of SEU in bulk Si and Ge SRAM von Moindjie, S., Munteanu, D., Autran, J.L.

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Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green’s function formalism von Bescond, M., Autran, J.L., Munteanu, D., Lannoo, M.

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Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation von Munteanu, D., Autran, J.L., Moindjie, S.

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Real-time soft-error rate measurements: A review von Autran, J.L., Munteanu, D., Roche, P., Gasiot, G.

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