Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor von Austin, Dustin Z, Jenkins, Melanie A, Allman, Derryl, Hose, Sallie, Price, David, Dezelah, Charles L, Conley, John F

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Laminate Al2O3/Ta2O5 Metal/Insulator/Insulator/Metal (MIIM) Devices for High-Voltage Applications von Jenkins, Melanie A., Austin, Dustin Z., Holden, Konner E. K., Allman, Derryl, Conley, John F.

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Correction to Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero Oxidation State Precursor von Austin, Dustin Z, Jenkins, Melanie A, Allman, Derryl, Hose, Sallie, Price, David, Dezelah, Charles L, Conley, John F

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Assessment of Energy Barriers Between ZrCuAlNi Amorphous Metal and Atomic Layer Deposition Insulators Using Internal Photoemission Spectroscopy von Jenkins, Melanie A., Klarr, Tyler, Austin, Dustin Z., Li, Wei, Nguyen, Nhan V., Conley, John F.

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Laminate Al 2 O 3 /Ta 2 O 5 Metal/Insulator/Insulator/Metal (MIIM) Devices for High-Voltage Applications von Jenkins, Melanie A., Austin, Dustin Z., Holden, Konner E. K., Allman, Derryl, Conley, John F.

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Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors von Austin, Dustin Z., Allman, Derryl, Price, David, Hose, Sallie, Conley, John F.

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Review-Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices von Jenkins, Melanie, Austin, Dustin Z., Conley, John F., Fan, Junqing, de Groot, C. H., Jiang, Liudi, Fan, Ye, Ali, Rizwan, Ghosh, Gargi, Orlowski, Marius, King, Sean W.

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Atomic layer deposition of bismuth oxide using Bi(OCMe2 iPr)3 and H2O von Austin, Dustin Z., Allman, Derryl, Price, David, Hose, Sallie, Saly, Mark, Conley, John F.

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Atomic layer deposition of bismuth oxide using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O von Austin, Dustin Z., Conley, John F., Allman, Derryl, Price, David, Hose, Sallie, Saly, Mark

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