Raman determination of phonon deformation potentials in α-GaN von Demangeot, F., Frandon, J., Renucci, M.A., Briot, O., Gil, B., Aulombard, R.L.

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Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy von Saarinen, K., Seppälä, P., Oila, J., Hautojärvi, P., Corbel, C., Briot, O., Aulombard, R. L.

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Thermal stability of GaN investigated by Raman scattering von Kuball, M., Demangeot, F., Frandon, J., Renucci, M. A., Massies, J., Grandjean, N., Aulombard, R. L., Briot, O.

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Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1−xAlxN solid solutions von Demangeot, F., Groenen, J., Frandon, J., Renucci, M. A., Briot, O., Clur, S., Aulombard, R. L.

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Influence of defect states on the nonlinear optical properties of GaN von Haag, H., Hönerlage, B., Briot, O., Aulombard, R. L.

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Thermal and Mechanical Properties of Silicon Tetrachloride (SiCl4) and Germanium Tetrachloride (GeCl4) in Their Vapor and Liquid Phases von Prat, O. P., Cloitre, T., Aulombard, R.-L.

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Interplay of electrons and phonons in heavily doped GaN epilayers von Demangeot, F., Frandon, J., Renucci, M. A., Meny, C., Briot, O., Aulombard, R. L.

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Properties of a photovoltaic detector based on an n-type GaN Schottky barrier von Binet, F., Duboz, J. Y., Laurent, N., Rosencher, E., Briot, O., Aulombard, R. L.

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Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal von Torres, J., Coquillat, D., Legros, R., Lascaray, J. P., Ruffenach, S., Briot, O., Aulombard, R. L., Peyrade, D., Chen, Y., Le Vassor d'Yerville, M., Centeno, E., Cassagne, D., Albert, J. P.

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MOVPE growth of zincblende magnesium sulphide von Konczewicz, L., Bigenwald, P., Cloitre, T., Chibane, M., Ricou, R., Testud, P., Briot, O., Aulombard, R.L.

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Realization and optical characterization of etched mirror facets in GaN cavities von Binet, F., Duboz, J. Y., Laurent, N., Bonnat, C., Collot, P., Hanauer, F., Briot, O., Aulombard, R. L.

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MOVPE growth and characterization of AlxGa1-xN von RUFFENACH-CLUR, S, BRIOT, O, ROUVIERE, J. L, GIL, B, AULOMBARD, R. L

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Sensing by Means of Nonlinear Optics with Functionalized GaAs/AlGaAs Photonic Crystals von Estephan, Elias, Bajoni, Daniele, Saab, Marie-belle, Cloitre, Thierry, Aulombard, Roger, Larroque, Christian, Andreani, Lucio Claudio, Liscidini, Marco, Malvezzi, Andrea Marco, Gergely, Csilla

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Raman and photoreflectance studies of electronic band bending at ZnSe/GaAs interfaces von Pagès, O., Erguig, H., Wagner, V., Zaoui, A., Laurenti, J.P., Gueurts, J., Aourag, H., Aulombard, R.L., Certier, M.

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Determination of light amplification processes in MOCVD grown ZnCdSe GRINSCH structures von Mikulskas, I, Brinkmann, D, Luterova, K, Tomasiunas, R, Hönerlage, B, Vaitkus, J.V, Aulombard, R.L, Cloitre, T

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Reflectivity analysis of ZnS layers grown on GaAs and Si substrates by metal organic vapour-phase epitaxy von Briot, O, Briot, N, Abounadi, A, Gil, B, Cloitre, T, Aulombard, R L

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Optimization of the MOVPE growth of GaN on sapphire von Briot, O., Alexis, J.P., Tchounkeu, M., Aulombard, R.L.

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Influence of the V/III molar ratio on the structural and electronic properties of MOVPE grown GaN von Briot, O, Alexis, J P, Sanchez, S, Gil, B, Aulombard, R L

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Competitive adsorption effects in the metalorganic vapor phase epitaxy of GaN von Briot, O., Clur, S., Aulombard, R. L.

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Fabrication and photoluminescence of GaN/sapphire submicron-scale structures with nanometre scale resolution von Ribayrol, A, Coquillat, D, De La Rue, R.M, Murad, S.K, Wilkinson, C.D.W, Girard, P, Briot, O, Aulombard, R.L

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