InAlAs/InGaAs high electron mobility transistors on low temperature InAlAs buffer layers by metalorganic chemical vapor deposition von Pan, N., Elliott, J., Hendriks, H., Aucoin, L., Fay, P., Adesida, I.

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Journalistic moral engagement: Narrative strategies in American muckraking von Aucoin, James L.

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High efficiency 40 watt PsHEMT S-band MIC power amplifiers von Bouthillette, S., Platzker, A., Aucoin, L.

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High power, high efficiency PHEMTs for use at 8 GHz von Teeter, D., Bouthillette, S., Aucoin, L., Platzker, A., Alfaro, C., Bradford, D.

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Epistemic responsibility and narrative theory: The literary journalism of Ryszard Kapuscinski von Aucoin, James L.

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A high power Q-band GaAs pseudomorphic HEMT monolithic amplifier von Boulais, W., Donahue, R.S., Platzker, A., Huang, J., Aucoin, L., Shanfield, S., Vafiades, M.

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One watt, very high frequency 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etching von Shanfield, S, Platzker, A, Aucoin, L, Kazior, T, Patel, B I, Bertrand, A, Hoke, W, Lyman, P

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Competition in the Health-Care Marketplace: A Beginning in California von Aucoin, Leonard M, Melia, Edward P, Duhl, Leonard J, Kurokawa, Patsy S

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Who Breastfeeds in New Brunswick, When and Why? von BEAUDRY, MICHELINE, AUCOIN-LARADE, LOUISE

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Freeze von AuCoin, Les

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High gain AlInAs/GaInAs/InP HEMT's with individually grounded source finger vias von Hur, K.Y., McTaggart, R.A., Ventresca, M.P., Wohlert, R., Aucoin, L.M., Kazior, T.E.

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Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors von Tkachenko, Y.A., Wei, C.J., Hwang, J.C.M., Harris, T.D., Grober, R.D., Hwang, D.M., Aucoin, L., Shanfield, S.

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The effect of channel dimensions on the millimeter-wave power performance of a pseudomorphic HEMT von Huang, J.C., Boulais, W., Platzker, A., Kazior, T., Aucoin, L., Shanfield, S., Bertrand, A., Vafiades, M., Niedzwiecki, M.

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Large periphery, high power pseudomorphic HEMTs von Aucoin, L., Bouthilette, S., Platzker, A., Shanfield, S., Bertrand, A., Hoke, W., Lyman, P.

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Hot-electron-induced degradation of metal-semiconductor field-effect transistors von Tkachenko, Y.A., Lan, Y., Whitefield, D.S., Wei, C.J., Hwang, J.C.M., Harris, T.D., Grober, R.D., Hwang, D.M., Aucoin, L., Shanfield, S.

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Radiation effects in nitrided oxides von Terry, F.L., Aucoin, R.J., Naiman, M.L., Senturia, S.D.

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A double-recessed Al(0.24)GaAs/In(0.16)GaAs pseudomorphic HEMT for Ka- and Q-band power applications von HUANG, JOHNC, SALEDAS, P, Wendler, John, Platzker, Aryeh, Boulais, W, Shanfield, Stanley, Hoke, W, Lyman, P, Aucoin, L, MIQUELARENA, A

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A double-recessed Al(0.24)GaAs/In(0.16)GaAspseudomorphic HEMT for < e1 > Ka < /e1 > -and Q -band power applications von Huang, J C, Saledas, P, Wendler, J, Platzker, A, Boulais, W, Shanfield, S, Hoke, W, Lyman, P, Aucoin, L, Miquelarena, A, Bedard, C, Atwood, D

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A double-recessed Al/sub 0.24/GaAs/In/sub 0.16/GaAs pseudomorphic HEMT for Ka- and Q-band power applications von Huang, J.C., Saledas, P., Wendler, J., Platzker, A., Boulais, W., Shanfield, S., Hoke, W., Lyman, P., Aucoin, L., Miquelarena, A., Bedard, C., Atwood, D.

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A double-recessed Al0.24GaAs/In0.16GaAs pseudomorphic HEMT for Ka- and Q-band power applications von HUANG, J. C, SALEDAS, P, BEDARD, C, ATWOOD, D, WENDLER, J, PLATZKER, A, BOULAIS, W, SHANFIELD, S, HOKE, W, LYMAN, P, AUCOIN, L, MIQUELARENA, A

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