Ferroelectric Tunnel Junction Memristors for In‐Memory Computing Accelerators von Athle, Robin, Borg, Mattias

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Impact of Temperature-Induced Oxide Defects on HfxZr1−xO2 Ferroelectric Tunnel Junction Memristor Performance von Athle, Robin, Borg, Mattias

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Impact of Temperature-Induced Oxide Defects on Hf x Zr 1−x O 2 Ferroelectric Tunnel Junction Memristor Performance von Athle, Robin, Borg, Mattias

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Impact of Temperature-Induced Oxide Defects on Hf } Zr -\textit} O } Ferroelectric Tunnel Junction Memristor Performance von Athle, Robin, Borg, Mattias

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Impact of Temperature-Induced Oxide Defects on Hf x Zr1−xO2 Ferroelectric Tunnel Junction Memristor Performance von Athle, Robin, Borg, Mattias

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Ferroelectric Memristors - Materials, Interfaces and Applications von Athle, Robin

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Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon von Persson, Anton E. O., Zhu, Zhongyunshen, Athle, Robin, Wernersson, Lars-Erik

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Ferroelectricity in Ultrathin HfO2‐Based Films by Nanosecond Laser Annealing von Athle, Robin, Hill, Megan O, Irish, Austin, Chen, Huaiyu, Timm, Rainer, Kristensson, Elias, Wallentin, Jesper, Borg, Mattias

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Ferroelectricity in Ultrathin HfO 2 -Based Films by Nanosecond Laser Annealing von Athle, Robin, Hill, Megan O, Irish, Austin, Chen, Huaiyu, Timm, Rainer, Kristensson, Elias, Wallentin, Jesper, Borg, Mattias

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Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2 von Athle, Robin, Persson, Anton E O, Irish, Austin, Menon, Heera, Timm, Rainer, Borg, Mattias

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Improved quality of InSb-on-insulator microstructures by flash annealing into melt von Menon, Heera, Södergren, Lasse, Athle, Robin, Johansson, Jonas, Steer, Matthew, Thayne, Iain, Borg, Mattias

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Integration of Ferroelectric Hf x Zr 1-x O 2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon von Persson, Anton E. O., Zhu, Zhongyunshen, Athle, Robin, Wernersson, Lars-Erik

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A method for estimating defects in ferroelectric thin film MOSCAPs von Persson, Anton E. O., Athle, Robin, Svensson, Johannes, Borg, Mattias, Wernersson, Lars-Erik

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Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization von Persson, Anton E. O., Athle, Robin, Littow, Pontus, Persson, Karl-Magnus, Svensson, Johannes, Borg, Mattias, Wernersson, Lars-Erik

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Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1–x Zr x O2 von Athle, Robin, Persson, Anton E. O, Irish, Austin, Menon, Heera, Timm, Rainer, Borg, Mattias

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Ferroelectric-Antiferroelectric Transition of Hf1- xZrxO2on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2 von Dahlberg, Hannes, Persson, Anton E.O., Athle, Robin, Wernersson, Lars Erik

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Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf 1- x Zr x O 2 von Athle, Robin, Persson, Anton E O, Irish, Austin, Menon, Heera, Timm, Rainer, Borg, Mattias

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Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2 von Athle, Robin, Persson, Anton E.O., Troian, Andrea, Borg, Mattias

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Fabrication of Single‐Crystalline InSb‐on‐Insulator by Rapid Melt Growth von Menon, Heera, Morgan, Nicholas Paul, Hetherington, Crispin, Athle, Robin, Steer, Matthew, Thayne, Iain, Fontcuberta i Morral, Anna, Borg, Mattias

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Ferroelectric-Antiferroelectric Transition of Hf1–xZrxO2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2 von Dahlberg, Hannes, Persson, Anton E. O., Athle, Robin, Wernersson, Lars-Erik

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