Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer von Ateeb Munshi, Mohammad, Ashraf Mir, Mehak, Joshi, Vipin, Roy Chaudhuri, Rajarshi, Malik, Rasik, Shrivastava, Mayank

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Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs von Mir, Mehak Ashraf, Joshi, Vipin, Chaudhuri, Rajarshi Roy, Munshi, Mohammad Ateeb, Malik, Rasik Rashid, Shrivastava, Mayank

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