Bulk Si1-xGex single- and poly-crystals : a new prospective material for electronics von ATABAEV, Ilkham G

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Oxide film assisted dopant diffusion in silicon carbide von Tin, Chin-Che, Mendis, Suwan, Chew, Kerlit, Atabaev, Ilkham, Saliev, Tojiddin, Bakhranov, Erkin, Atabaev, Bakhtiyar, Adedeji, Victor, Rusli

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Bulk Si 1− xGe x single- and poly-crystals: a new prospective material for electronics von Atabaev, Ilkham G.

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Influence of Defects on Low Temperature Diffusion of Boron in SiC von Atabaev, Ilkham G., Saliev, Tojiddin M., Saidov, Dilmurad, Pak, Vadim A., Juraev, Khimmatali, Tin, Chin-Che, Atabaev, Bakhtiyar G., Giryansky, Vyacheslav N.

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Low temperature impurity doping of silicon carbide von ATABAEV BAKHTIYAR GAFUROVICH, AHYI AYAYI CLAUDE, SALIEV TOJIDDIN MUTALOVICH, MENDIS BALAPUWADUGE SUWAN PATHUM, LI MINGYU, ATABAYEV ILKHAM GAFUROVICH, BAKHRANOV ERKIN NUROVICH, TIN CHIN, ADEDEJI ADETAYO VICTOR

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Low temperature impurity doping of silicon carbide von Tin, Chin-Che, Adedeji, Adetayo Victor, Atabayev, Ilkham Gafurovich, Atabaev, Bakhtiyar Gafurovich, Saliev, Tojiddin Mutalovich, Bakhranov, Erkin Nurovich, Li, Mingyu, Mendis, Balapuwaduge Suwan Pathum, Ahyi, Ayayi Claude

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Low temperature impurity doping of silicon carbide von ATABAEV BAKHTIYAR GAFUROVICH, AHYI AYAYI CLAUDE, SALIEV TOJIDDIN MUTALOVICH, MENDIS BALAPUWADUGE SUWAN PATHUM, LI MINGYU, ATABAYEV ILKHAM GAFUROVICH, BAKHRANOV ERKIN NUROVICH, TIN CHIN, ADEDEJI ADETAYO VICTOR

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