Potential application of ternary pentagonal p-SiXY4 (X = Si, C, Ge; Y = C, B, N) materials for optoelectronics and photocatalytic water splitting: a first-principles study von Maymoun, M, Oukahou, S, Elomrani, A, Benaddi, A, Etrini, A, Ataalite, H, Bahou, Y, Hasnaoui, A, Sbiaai, K

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Investigation of growth mode and surface roughness during homoepitaxial growth of silver metal using kinetic Monte Carlo simulation von Sbiaai, K., Ataalite, H., Dardouri, M., Hasnaoui, A., Fathi, A.

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Potential application of ternary pentagonal p-SiXY 4 (X = Si, C, Ge; Y = C, B, N) materials for optoelectronics and photocatalytic water splitting: a first-principles study von Maymoun, M., Oukahou, S., Elomrani, A., Benaddi, A., Etrini, A., Ataalite, H., Bahou, Y., Hasnaoui, A., Sbiaai, K.

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Potential application of ternary pentagonal p-SiXY (X = Si, C, Ge; Y = C, B, N) materials for optoelectronics and photocatalytic water splitting: a first-principles study von Maymoun, M, Oukahou, S, Elomrani, A, Benaddi, A, Etrini, A, Ataalite, H, Bahou, Y, Hasnaoui, A, Sbiaai, K

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