Insulated gate and surface passivation structures for GaN-based power transistors von Yatabe, Zenji, Asubar, Joel T, Hashizume, Tamotsu

Volltext

Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation von Asubar, Joel T., Yatabe, Zenji, Gregusova, Dagmar, Hashizume, Tamotsu

Volltext

Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates von Kaneki, Shota, Ohira, Joji, Toiya, Shota, Yatabe, Zenji, Asubar, Joel T., Hashizume, Tamotsu

Volltext

Low thermal budget V/Al/Mo/Au ohmic contacts for improved performance of AlGaN/GaN MIS-HEMTs von Baratov, Ali, Igarashi, Takahiro, Ishiguro, Masaki, Maeda, Shogo, Terai, Suguru, Kuzuhara, Masaaki, Asubar, Joel T.

Volltext

Large As sublattice distortion in sphalerite ZnSnAs2 thin films revealed by x-ray fluorescence holography von Hayashi, Kouichi, Uchitomi, Naotaka, Yamagami, Keitaro, Suzuki, Akiko, Yoshizawa, Hayato, Asubar, Joel T., Happo, Naohisa, Hosokawa, Shinya

Volltext

Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax Using Recessed-Structure With Regrown AlGaN Barrier von Joel Tacla Asubar, Kawabata, Shinsaku, Tokuda, Hirokuni, Yamamoto, Akio, Kuzuhara, Masaaki

Volltext

Design considerations for normally-off operation in Schottky gate p-GaN/AlGaN/GaN HEMTs von Tokuda, Hirokuni, Asubar, Joel T., Kuzuhara, Masaaki

Volltext

Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical Properties of ZrO2/AlGaN/GaN Structures von Nezu, Toi, Maeda, Shogo, Baratov, Ali, Terai, Suguru, Sekiyama, Kishi, Nagase, Itsuki, Kuzuhara, Masaaki, Yamamoto, Akio, Asubar, Joel T.

Volltext

Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions von Jadhav, Aakash, Ozawa, Takashi, Baratov, Ali, Asubar, Joel T., Kuzuhara, Masaaki, Wakejima, Akio, Yamashita, Shunpei, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi, Roy, Sourajeet, Sarkar, Biplab

Volltext

Enhancement‐Mode AlGaN/GaN Vertical Trench Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors with a High Drain Current Fabricated Using the AlGaN Regrowth Technique... von Yamamoto, Akio, Kanatani, Keito, Yoneda, Norifumi, Asubar, Joel T., Tokuda, Hirokuni, Kuzuhara, Masaaki

Volltext

AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation von Kuzuhara, Masaaki, Asubar, Joel T., Tokuda, Hirokuni

Volltext

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors von Yatabe, Zenji, Hori, Yujin, Ma, Wan-Cheng, Asubar, Joel T., Akazawa, Masamichi, Sato, Taketomo, Hashizume, Tamotsu

Volltext

Interface state density in mist chemical vapor deposited Al2O3/AlGaN/GaN structure von Bito, Keigo, Ishiguro, Masaki, Radzuan, Hadirah A., Hiroshige, Hikaru, Motoyama, Tomohiro, Nakamura, Yusui, Asubar, Joel T., Yatabe, Zenji

Volltext

Stoichiometric imbalances in Mg-implanted GaN von Herbert, Kai C., Shibata, Kazuki, Asubar, Joel T., Kuzuhara, Masaaki

Volltext

Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration von Uchitomi, Naotaka, Hidaka, Shiro, Saito, Shin, Asubar, Joel T., Toyota, Hideyuki

Volltext

Influence of reactive-ion-etching depth on interface properties in Al2O3/n-GaN MOS diodes von Tokuda, Hirokuni, Harada, Sayaka, Asubar, Joel T., Kuzuhara, Masaaki

Volltext

Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces von Yatabe, Zenji, Asubar, Joel T., Sato, Taketomo, Hashizume, Tamotsu

Volltext

Ornstein–Uhlenbeck process in a human body weight fluctuation von Yatabe, Zenji, Asubar, Joel T.

Volltext

Analytical derivation of interface state density from sub-threshold swing in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors von Tokuda, Hirokuni, Asubar, Joel T., Kuzuhara, Masaaki

Volltext

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs von Ohi, Kota, Asubar, Joel Tacla, Nishiguchi, Kenya, Hashizume, Tamotsu

Volltext