Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide von Kraus, H, Simin, D, Kasper, C, Suda, Y, Kawabata, S, Kada, W, Honda, T, Hijikata, Y, Ohshima, T, Dyakonov, V, Astakhov, G. V

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Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature von Hernandez-Minguez, A., Poshakinskiy, A., Hollenbach, M., Santos, P., Astakhov, G.

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Observation of the universal magnetoelectric effect in a 3D topological insulator von Dziom, V., Shuvaev, A., Pimenov, A., Astakhov, G. V., Ames, C., Bendias, K., Böttcher, J., Tkachov, G., Hankiewicz, E. M., Brüne, C., Buhmann, H., Molenkamp, L. W.

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Excitation and coherent control of spin qudit modes in silicon carbide at room temperature von Soltamov, V. A., Kasper, C., Poshakinskiy, A. V., Anisimov, A. N., Mokhov, E. N., Sperlich, A., Tarasenko, S. A., Baranov, P. G., Astakhov, G. V., Dyakonov, V.

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All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide von Simin, D., Soltamov, V. A., Poshakinskiy, A. V., Anisimov, A. N., Babunts, R. A., Tolmachev, D. O., Mokhov, E. N., Trupke, M., Tarasenko, S. A., Sperlich, A., Baranov, P. G., Dyakonov, V., Astakhov, G. V.

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Optical thermometry based on level anticrossing in silicon carbide von Anisimov, A. N., Simin, D., Soltamov, V. A., Lebedev, S. P., Baranov, P. G., Astakhov, G. V., Dyakonov, V.

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Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide von Riedel, D, Fuchs, F, Kraus, H, Väth, S, Sperlich, A, Dyakonov, V, Soltamova, A A, Baranov, P G, Ilyin, V A, Astakhov, G V

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Locking of electron spin coherence above 20 ms in natural silicon carbide von Simin, D., Kraus, H., Sperlich, A., Ohshima, T., Astakhov, G. V., Dyakonov, V.

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Spin and Optical Properties of Silicon Vacancies in Silicon Carbide − A Review von Tarasenko, S. A., Poshakinskiy, A. V., Simin, D., Soltamov, V. A., Mokhov, E. N., Baranov, P. G., Dyakonov, V., Astakhov, G. V.

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Silicon carbide light-emitting diode as a prospective room temperature source for single photons von Fuchs, F., Soltamov, V. A., Väth, S., Baranov, P. G., Mokhov, E. N., Astakhov, G. V., Dyakonov, V.

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Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide von Hain, T. C., Fuchs, F., Soltamov, V. A., Baranov, P. G., Astakhov, G. V., Hertel, T., Dyakonov, V.

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Influence of Irradiation on Defect Spin Coherence in Silicon Carbide von Kasper, C., Klenkert, D., Shang, Z., Simin, D., Gottscholl, A., Sperlich, A., Kraus, H., Schneider, C., Zhou, S., Trupke, M., Kada, W., Ohshima, T., Dyakonov, Astakhov, G.

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Giant magneto-optical faraday effect in HgTe thin films in the terahertz spectral range von Shuvaev, A M, Astakhov, G V, Pimenov, A, Brüne, C, Buhmann, H, Molenkamp, L W

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Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects von Muzha, A., Fuchs, F., Tarakina, N. V., Simin, D., Trupke, M., Soltamov, V. A., Mokhov, E. N., Baranov, P. G., Dyakonov, V., Krueger, A., Astakhov, G. V.

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Optically detected spin-mechanical resonance in silicon carbide membranes von Poshakinskiy, A. V., Astakhov, G. V.

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Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission von Fischer, M., Sperlich, A., Kraus, H., Ohshima, T., Astakhov, G. V., Dyakonov, V.

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Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide von Fuchs, F., Stender, B., Trupke, M., Simin, D., Pflaum, J., Dyakonov, V., Astakhov, G. V.

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Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface von Breev, I. D., Shang, Z., Poshakinskiy, A. V., Singh, H., Berencén, Y., Hollenbach, M., Nagalyuk, S. S., Mokhov, E. N., Babunts, R. A., Baranov, P. G., Suter, D., Tarasenko, S. A., Astakhov, G. V., Anisimov, A. N.

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Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide von Kraus, H., Soltamov, V. A., Fuchs, F., Simin, D., Sperlich, A., Baranov, P. G., Astakhov, G. V., Dyakonov, V.

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Spin and Optical Properties of Silicon Vacancies in Silicon Carbide − A Review (Phys. Status Solidi B 1/2018) von Tarasenko, S. A., Poshakinskiy, A. V., Simin, D., Soltamov, V. A., Mokhov, E. N., Baranov, P. G., Dyakonov, V., Astakhov, G. V.

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