Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI von Assaderaghi, F., Sinitsky, D., Parke, S.A., Bokor, J., Ko, P.K., Chenming Hu

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A 16 Gb/s/Link, 64 GB/s Bidirectional Asymmetric Memory Interface von Haechang Lee, Kun-Yung Ken Chang, Jung-Hoon Chun, Ting Wu, Frans, Y., Leibowitz, B., Nhat Nguyen, Chin, T.J., Kaviani, K., Shen, J., Xudong Shi, Beyene, W.T., Li, S., Navid, R., Aleksic, M., Lee, F.S., Quan, F., Zerbe, J., Perego, R., Assaderaghi, F.

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A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation von Assaderaghi, F., Parke, S., Sinitsky, D., Bokor, J., Ko, P.K., Chenming Hu

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Clocking and circuit design for a parallel I/O on a first-generation CELL processor von Ken Chang, Pamarti, S., Kaviani, K., Alon, E., Xudong Shi, Chin, T.J., Jie Shen, Yip, G., Madden, C., Schmitt, R., Yuan, C., Assaderaghi, F., Horowitz, M.

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High-field transport of inversion-layer electrons and holes including velocity overshoot von Assaderaghi, F., Sinitsky, D., Bokor, J., Ko, P.K., Gaw, H., Chenming Hu

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The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain beta von Chen, J., Assaderaghi, F., Ko, P.-K., Hu, C.

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High field hole velocity and velocity overshoot in silicon inversion layers von Sinitsky, D., Assaderaghi, F., Hu, C., Bokor, J.

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Transient pass-transistor leakage current in SOI MOSFET's von Assaderaghi, F., Shahidi, G.G., Wagner, L., Hsieh, M., Pelella, M., Chu, S., Dennard, R.H., Davari, B.

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A Temperature-to-Digital Converter for a MEMS-Based Programmable Oscillator With Frequency Stability and Integrated Jitter von Perrott, M. H., Salvia, J. C., Lee, F. S., Partridge, A., Mukherjee, S., Arft, C., Jintae Kim, Arumugam, N., Gupta, P., Tabatabaei, S., Pamarti, S., Haechang Lee, Assaderaghi, F.

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PD/SOI SRAM performance in presence of gate-to-body tunneling current von Joshi, R.V., Ching-Te Chuang, Fung, S.K.H., Assaderaghi, F., Sherony, M., Yang, I., Shahidi, G.

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Observation of velocity overshoot in silicon inversion layers von Assaderaghi, F., Kop, P.K., Hu, C.

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Theoretical determination of the temporal and spatial structure of /spl alpha/-particle induced electron-hole pair generation in silicon von Oldiges, P., Dennard, R., Heidel, D., Klaasen, B., Assaderaghi, F., Ieong, M.

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Simulation of SOI devices and circuits using BSIM3SOI von Sinitsky, D., Tang, S., Jangity, A., Assaderaghi, F., Shahidi, G., Chenming Hu

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Dynamic threshold body- and gate-coupled SOI ESD protection networks von Voldman, S., Assaderaghi, F., Mandelman, J., Hsu, L., Shahidi, G.

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DTMOS: its derivatives and variations, and their potential applications von Assaderaghi, F.

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Electrostatic discharge (ESD) protection in silicon-on-insulator (SOI) CMOS technology with aluminum and copper interconnects in advanced microprocessor semiconductor chips von Voldman, S., Hui, D., Warriner, L., Young, D., Howard, J., Assaderaghi, F., Shahidi, G.

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Recessed-channel structure for fabricating ultrathin SOI MOSFET with low series resistance von Chan, M., Assaderaghi, F., Parke, S.A., Hu, C., Ko, P.K.

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Silicon-on-insulator dynamic threshold ESD networks and active clamp circuitry von Voldman, S., Hui, D., Young, D., Williams, R., Dreps, D., Howard, J., Sherony, M., Assaderaghi, F., Shahidi, G.

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Velocity overshoot of electrons and holes in Si inversion layers von Sinitsky, D, Assaderaghi, F, Orshansky, M, Bokor, J, Hu, C

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A temperature-to-digital converter for a MEMS-based programmable oscillator with better than ±0.5ppm frequency stability von Perrott, M., Salvia, J., Lee, F., Partridge, A., Mukherjee, S., Arft, C., Jin-Tae Kim, Arumugam, N., Gupta, P., Tabatabaei, S., Pamarti, S., Haechang Lee, Assaderaghi, F.

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