Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films von Yu, Yiling, Yu, Yifei, Cai, Yongqing, Li, Wei, Gurarslan, Alper, Peelaers, Hartwin, Aspnes, David E., Van de Walle, Chris G., Nguyen, Nhan V., Zhang, Yong-Wei, Cao, Linyou

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Decoding ‘Maximum Entropy’ Deconvolution von Le, Long V., Kim, Tae Jung, Kim, Young Dong, Aspnes, David E.

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Reducing or eliminating noise in ellipsometric spectra von Le, Long V., Kim, Tae Jung, Kim, Young Dong, Aspnes, David E.

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Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si von Gokce, Bilal, Adles, Eric J., Aspnes, David E., Gundogdu, Kenan

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Dielectric Functions and Critical Points of GaAsSb Alloys von Kim, Tae Jung, Park, Han Gyeol, Byun, Jun Seok, Le, Van Long, Nguyen, Hoang Tung, Nguyen, Xuan Au, Kim, Young Dong, Song, Jin Dong, Aspnes, David E.

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Quantitative assessment of linear noise-reduction filters for spectroscopy von Le, Long V, Kim, Young D, Aspnes, David E

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Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides von Morales, Daniel, Stoute, Nicholas A., Yu, Zhiyuan, Aspnes, David E., Dickey, Michael D.

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Detection of the Biexciton of Monolayer WS2 in Ellipsometric Data: A Maximum‐Entropy Success von Le, Long V., Kim, Tae Jung, Kim, Young Dong, Aspnes, David E.

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Noise reduction and peak detection in x-ray diffraction data by linear and nonlinear methods von Le, Long V., Deijkers, Jeroen A., Kim, Young D., Wadley, Haydn N. G., Aspnes, David E.

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Parameterization of the dielectric functions of InGaSb alloys von Kim, Tae Jung, Byun, Jun Seok, Hwang, Soon Yong, Park, Han Gyeol, Kang, Yu Ri, Park, Jae Chan, Kim, Young Dong, Aspnes, David E.

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Follow the light: Ellipsometry and polarimetry von Arwin, Hans, Aspnes, David E.

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Linear and nonlinear filtering of spectra von Aspnes, David E., Le, Van L., Kim, Young D.

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Combined interpolation, scale change, and noise reduction in spectral analysis von Le, Van L., Kim, Tae J., Kim, Young D., Aspnes, David E.

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Detection of the Biexciton of Monolayer WS 2 in Ellipsometric Data: A Maximum‐Entropy Success von Le, Long V., Kim, Tae Jung, Kim, Young Dong, Aspnes, David E.

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Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si von Gokce, Bilal, Aspnes, David E., Gundogdu, Kenan

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Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)–Si by spectroscopic ellipsometry, Auger spectroscopy, and STM von Nelson, Florence, Sandin, Andreas, Dougherty, Daniel B., Aspnes, David E., Rowe, Jack E., Diebold, Alain C.

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Effect of strain on bond-specific reaction kinetics during the oxidationof H-terminated (111) Si von Gokce, Bilal, Aspnes, David E., Gundogdu, Kenan

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Effect of Ar+ ion beam in the process of plasma surface modification of PET films von Hyun, Jinho, Barletta, Philip, Koh, Kwangok, Yoo, Sangduk, Oh, Jaehwan, Aspnes, David E., Cuomo, Jerome J.

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Experiment and theory of 'transparent' metal films von Porter, John D, Heller, Adam, Aspnes, David E

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Detection and analysis of depolarization artifacts in rotating-compensator polarimeters von Li, S F, Opsal, J, Chu, H, Aspnes, D E

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