External removal of endpoint-discontinuity artifacts in the reciprocal-space analysis of spectra von Le, V.L., Kim, T.J., Kim, Y.D., Aspnes, D.E.

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Spectroscopic ellipsometry — Past, present, and future von Aspnes, D.E.

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Eliminating noise from spectra by linear and nonlinear methods von Le, L.V., Kim, Y.D., Aspnes, D.E.

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Dielectric functions and interband transitions of InxAl1 − xP alloys von Kim, T.J., Hwang, S.Y., Byun, J.S., Aspnes, D.E., Lee, E.H., Song, J.D., Liang, C.-T., Chang, Y.-C., Park, H.G., Choi, J., Kim, J.Y., Kang, Y.R., Park, J.C., Kim, Y.D.

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Comparison of the capabilities of rotating-analyzer and rotating-compensator ellipsometers by measurements on a single system von Mori, T., Aspnes, D.E.

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Plasmonics and effective-medium theories von Aspnes, D.E.

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Expanding horizons: new developments in ellipsometry and polarimetry von Aspnes, D.E.

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Surface-induced optical anisotropy of oxidized, clean, and hydrogenated vicinal Si(001) surfaces von Mantese, L., Rossow, U., Aspnes, D.E.

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Combined direct- and reciprocal-space approach for converting spectra to energy scales with negligible loss of information von Aspnes, D.E., Choi, S.G.

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Broadband spectral operation of a rotating-compensator ellipsometer von Opsal, J., Fanton, J., Chen, J., Leng, J., Wei, L., Uhrich, C., Senko, M., Zaiser, C., Aspnes, D.E.

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Recombination at semiconductor surfaces and interfaces von Aspnes, D.E.

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Follow the light: Ellipsometry and polarimetry von Arwin, Hans, Aspnes, David E.

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Optical characterization of surfaces during epitaxial growth using RDS and GIXS von Kamiya, I., Mantese, L., Aspnes, D.E., Kisker, D.W., Fuoss, P.H., Stephenson, G.B., Brennan, S.

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Analytic representation of the dielectric functions of InAsxSb1−x alloys in the parametric model von Hwang, S.Y., Kim, T.J., Byun, J.S., Barange, N.S., Diware, M.S., Kim, Y.D., Aspnes, D.E., Yoon, J.J., Song, J.D.

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Interpretation of critical point energy shifts in crystalline Si by near-surface localization of excited electronic states von Mantese, L., Bell, K.A., Rossow, U., Aspnes, D.E.

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Unambiguous determination of thickness and dielectric function of thin films by spectroscopic ellipsometry von Arwin, H., Aspnes, D.E.

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Determination of optical properties of thin organic films by spectroellipsometry von Arwin, H., Aspnes, D.E.

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Analytic representations of the dielectric functions of materials for device and structural modeling von Leng, J., Opsal, J., Chu, H., Senko, M., Aspnes, D.E.

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Biplate artifacts in rotating-compensator ellipsometers von Ebert, K., Aspnes, D.E.

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Parametric modeling of the dielectric functions of Cd1−xMgxTe alloy films von Ihn, Y.S., Kim, T.J., Ghong, T.H., Kim, Y.D., Aspnes, D.E., Kossut, J.

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