Treffer 1 - 4 von 4 für Suche 'Askerov, Sh.G.', Suchdauer: 0,27s Treffer weiter einschränken
  1. 1
    The frequency and voltage dependent electrical characteristics of Al-TiW-Pd2Si/n-Si structure using I-V, C-V and G/ω-V measurements

    The frequency and voltage dependent electrical characteristics of Al-TiW-Pd2Si/n-Si structure using I-V, C-V and G/ω-V measurements von AFANDIYEVA, I. M, DÖKME, I, ALTINDAL, S, ABDULLAYEVA, L. K, ASKEROV, Sh. G

    Veröffentlicht in Microelectronic engineering

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  2. 2
    The frequency and voltage dependent electrical characteristics of Al–TiW–Pd 2Si/n-Si structure using I– V, C– V and G/ ω– V measurements

    The frequency and voltage dependent electrical characteristics of Al–TiW–Pd 2Si/n-Si structure using I– V, C– V and G/ ω– V measurements von Afandiyeva, İ.M., Dökme, İ., Altındal, Ş., Abdullayeva, L.K., Askerov, Sh.G.

    Veröffentlicht in Microelectronic engineering

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  3. 3
    The obtaining of Al–Ti 10W 90–Si(n) Schottky diodes and investigation of their interface surface states density

    The obtaining of Al–Ti 10W 90–Si(n) Schottky diodes and investigation of their interface surface states density von Afandiyeva, I.M., Askerov, SH.G., Abdullayeva, L.K., Aslanov, SH.S.

    Veröffentlicht in Solid-state electronics

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  4. 4
    The obtaining of Al-Ti10W90-Si(n) Schottky diodes and investigation of their interface surface states density

    The obtaining of Al-Ti10W90-Si(n) Schottky diodes and investigation of their interface surface states density von AFANDIYEVA, I. M, ASKEROV, Sh. G, ABDULLAYEVA, L. K, ASLANOV, Sh. S

    Veröffentlicht in Solid-state electronics

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