Analytical models for concentration profiles after single and double reversals of the electric field during K+-Na+ field assisted ion exchanges in glass von Oven, R, Ashworth, D G, Batchelor, S

Volltext

Representation of ion implantation profiles by Pearson frequency distribution curves von Ashworth, D G, Oven, R, Mundin, B

Volltext

Modelling the annealing of electric-field-assisted K+-Na+ ion exchanged planar waveguides manufactured in soda-lime glass von Oven, R, Ashworth, D G, Batchelor, S

Volltext

Effects of annealing electric field assisted K+-Na+ ion exchanged soda-lime glass guides von OVEN, R, BATCHELOR, S, ASHWORTH, D. G

Volltext

The effect of field reversals on refractive index profiles and stress in electric field assisted K+-Na+ ion-exchanged soda-lime glass von BATCHELOR, S, OVEN, R, ASHWORTH, D. G

Volltext

Reconstruction of refractive index profiles from multiple wavelength mode indices von Batchelor, S., Oven, R., Ashworth, D.G.

Volltext

A generalized transport equation for ion implantation into infinite targets von Bowyer, M D J, Ashworth, D G, Oven, R

Volltext

Generating ion implantation profiles in one and two dimensions. 1: density functions von Bowyer, M D J, Ashworth, D G, Oven, R

Volltext

Generating ion implantation profiles in one and two dimensions. 2: depth-dependent moments and line-source responses von Bowyer, M D J, Ashworth, D G, Oven, R

Volltext

The influence of the pseudo-mixed-alkali effect on the field-assisted diffusion of silver ions into glass for optical waveguides von Ashworth, D G, Oven, R, Page, M C

Volltext

A transport equation model that is consistent with Monte Carlo simulations of ion implantation into infinite targets von Oven, R, Bowyer, M D J, Ashworth, D G

Volltext

Central moments of ion implantation distributions derived by the backward Boltzmann transport equation compared with Monte Carlo simulations von Bowyer, M D J, Ashworth, D G, Oven, R

Volltext

A revised version of PRAL-the projected range algorithm von Ashworth, D G, Bowyer, M D J, Oven, R

Volltext

Representation of two-dimensional ion implantation rest distributions by Pearson distribution curves for silicon technology von Bowyer, M.D.J., Ashworth, D.G., Oven, R.

Volltext

Representation of ion implantation projected range profiles by Pearson distribution curves for silicon technology von Bowyer, M.D.J., Ashworth, D.G., Oven, R.

Volltext

Representation of ion implantation distributions in two and three dimensions von Ashworth, D G, Bowyer, M D J, Oven, R

Volltext

A comparison of two-dimensional ion-implantation profiles von Oven, R, Ashworth, D G

Volltext

On the analysis of field-assisted ion diffusion into glass von Oven, R, Ashworth, D G, Page, M C

Volltext

Analytical integration of the Thomas-Fermi scattering cross section von ASHWORTH, D. G, MOULAVI-KAKHKI, M

Volltext

Transformations between inertial and linearly accelerated frames of reference von ASHWORTH, D. G

Volltext