Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance von Kopaczek, J., Kudrawiec, R., Linhart, W. M., Rajpalke, M. K., Yu, K. M., Jones, T. S., Ashwin, M. J., Misiewicz, J., Veal, T. D.

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Growth and characterisation of MnSb(0 0 0 1)/InGaAs(1 1 1)A epitaxial films von Mousley, P.J., Burrows, C.W., Ashwin, M.J., Sánchez, A.M., Lazarov, V.K., Bell, G.R.

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A RHEED/MBE-STM investigation of the static and dynamic InAs(001) surface von Bomphrey, J.J., Ashwin, M.J., Jones, T.S.

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Depth sensitive X‐ray diffraction as a probe of buried half‐metallic inclusions von Burrows, C. W., A. Hase, T. P., Ashwin, M. J., Mousley, P. J., Bell, G. R.

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In situ X‐ray diffraction of GaAs/MnSb/Ga(In)As heterostructures von Mousley, P. J., Burrows, C. W., Ashwin, M. J., Takahasi, M., Sasaki, T., Bell, G. R.

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N incorporation in GaInNSb alloys and lattice matching to GaSb von Ashwin, M. J., Walker, D., Thomas, P. A., Jones, T. S., Veal, T. D.

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Molecular-beam epitaxy and lattice parameter of GaN sub(x)Sb sub(1-x): deviation from Vegard's law for x > 0.02 von Ashwin, MJ, Morris, RJH, Walker, D, Thomas, P A, Dowsett, M G, Jones, T S, Veal, T D

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Growth of InAs/InP(0 0 1) nanostructures: The transition from quantum wires to quantum dots von Parry, H.J., Ashwin, M.J., Neave, J.H., Jones, T.S.

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Influence of the growth conditions on the ridge morphology during GaAs deposition on GaAs (001) patterned substrates von Williams, R. S., Ashwin, M. J., Jones, T. S., Neave, J. H.

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A comparison between GaAs and AlAs deposition on patterned substrates von Williams, R.S., Ashwin, M.J., Jones, T.S., Neave, J.H.

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Isolated interstitial hydrogen molecules in hydrogenated crystalline silicon von Pritchard, R. E., Ashwin, M. J., Tucker, J. H., Newman, R. C.

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Ridge structure transformation by group-III species modification during the growth of (Al,Ga)As on patterned substrates von Williams, R. S., Ashwin, M. J., Jones, T. S., Neave, J. H.

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The conversion of isolated oxygen atoms to a fast diffusing species in Czochralski silicon at low temperatures von McQuaid, S. A., Johnson, B. K., Gambaro, D., Falster, R., Ashwin, M. J., Tucker, J. H.

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Surface morphology of InP thin films grown on InP(001) by solid source molecular beam epitaxy von Parry, H J, Ashwin, M J, Neave, J H, Jones, T S

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Optimising the growth of pyramidal GaAs microstructures on pre-patterned GaAs(0 0 1) substrates von Williams, R.S, Ashwin, M.J, Neave, J.H, Jones, T.S

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Interplay of growing facets during self-assembled growth of GaAs on patterned substrates von Chandrinou, C, Ashwin, M J, Neave, J H, Jones, T S

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Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates von Pritchard, R. E., Oulton, R. F., Stavrinou, P. N., Parry, G., Williams, R. S., Ashwin, M. J., Neave, J. H., Jones, T. S.

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Shallow Thermal Donors in Silicon: The Roles of Al, H, N, and Point Defects von Newman, R.C., Ashwin, M.J., Pritchard, R.E., Tucker, J.H.

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Growth of Si-doped GaAs(110) thin films by molecular beam epitaxy; Si site occupation and the role of arsenic von Tok, E. S., Neave, J. H., Ashwin, M. J., Joyce, B. A., Jones, T. S.

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The infrared vibrational absorption spectrum of the Si–X defect present in heavily Si doped GaAs von Ashwin, M. J., Newman, R. C., Muraki, K.

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