Commissioning and simulation of CHROMIE, a high-rate test beam telescope von Asenov, P.

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Investigating the origins of high multilevel resistive switching in forming free Ti/TiO2−x-based memory devices through experiments and simulations von Bousoulas, P., Giannopoulos, I., Asenov, P., Karageorgiou, I., Tsoukalas, D.

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A Worst-Case Analysis of Trap-Assisted Tunneling Leakage in DRAM Using a Machine Learning Approach von Lee, J., Asenov, P., Aldegunde, M., Amoroso, S. M., Brown, A. R., Moroz, V.

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End-to-end simulation of particle physics events with flow matching and generator oversampling von Vaselli, F, Cattafesta, F, Asenov, P, Rizzi, A

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Engineering amorphous-crystalline interfaces in TiO2−x/TiO2−y-based bilayer structures for enhanced resistive switching and synaptic properties von Bousoulas, P., Asenov, P., Karageorgiou, I., Sakellaropoulos, D., Stathopoulos, S., Tsoukalas, D.

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A Two-Prong Approach to the Simulation of DC-RSD: TCAD and SPICE von Croci, T., Menzio, L., Arcidiacono, R., Arneodo, M., Asenov, P., Cartiglia, N., Ferrero, M., Fondacci, A., Monaco, V., Morozzi, A., Moscatelli, F., Mulargia, R., Robutti, E., Sola, V., Passeri, D.

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Fast calculation of capacitances in silicon sensors with 3D and 2D numerical solutions of the Laplace's equation and comparison with experimental data and TCAD simulations von Assiouras, P., Asenov, P., Kyriakis, A., Loukas, D.

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TCAD optimization of LGAD sensors for extremely high fluence applications von Croci, T., Morozzi, A., Sola, V., Asenov, P., Fondacci, A., Giordanengo, S., Borghi, G., Vignali, M.C., Paternoster, G., Boscardin, M., Menichelli, M., Cartiglia, N., Passeri, D., Moscatelli, F.

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TCAD simulations of non-irradiated and irradiated low-gain avalanche diodes and comparison with measurements von Croci, T., Morozzi, A., Moscatelli, F., Sola, V., Borghi, G., Paternoster, G., Centis Vignali, M., Asenov, P., Passeri, D.

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Study of p-type silicon MOS capacitors at HL-LHC radiation levels through irradiation with a cobalt-60 gamma source and a TCAD simulation von Asenov, P., Assiouras, P., Boziari, A., Filippou, K., Kazas, I., Kyriakis, A., Loukas, D., Morozzi, A., Moscatelli, F., Passeri, D.

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Multiparty Call Control at the Network Edge von Atanasov, Ivaylo I., Pencheva, Evelina N., Velkova, Denitsa L., Asenov, Ivaylo P.

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Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology von Gerrer, L., Millar, C., Asenov, A., Amoroso, S. M., Asenov, P., Ding, J., Cheng, B., Adamu-Lema, F., Markov, S., Asenov, A., Reid, D.

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Investigating the origins of high multilevel resistive switching in formingfree Ti/TiO2−x-based memory devices through experiments andsimulations von Bousoulas, P, Giannopoulos, I, Asenov, P, Karageorgiou, I, Tsoukalas, D

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Combining process and statistical variability in the evaluation of the effectiveness of corners in digital circuit parametric yield analysis von Asenov, P, Kamsani, N A, Reid, D, Millar, C, Roy, S, Asenov, A

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A compensated design of the LGAD gain layer von Sola, V., Arcidiacono, R., Asenov, P., Borghi, G., Boscardin, M., Cartiglia, N., Vignali, M. Centis, Croci, T., Ferrero, M., Fondacci, A., Gioachin, G., Giordanengo, S., Lantieri, L., Mandurrino, M., Menzio, L., Monaco, V., Morozzi, A., Moscatelli, F., Passeri, D., Pastrone, N., Paternoster, G., Siviero, F., Staiano, A., Tornago, M.

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Development and test of innovative Low-Gain Avalanche Diodes for particle tracking in 4 dimensions von Croci, T., Morozzi, A., Asenov, P., Fondacci, A., Moscatelli, F., Passeri, D., Sola, V., Menzio, L., Ferrero, M., Mandurrino, M., Arcidiacono, R., Cartiglia, N., Mulargia, R., Robutti, E., Villarreal, O.A. Marti, Cirio, R., Sacchi, R., Staiano, A., Monaco, V., Arneodo, M.

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An advanced statistical compact model strategy for SRAM simulation at reduced VDD von Asenov, P., Reid, D., Roy, S., Millar, C., Asenov, A.

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Study of p-type silicon MOS capacitors at HL-LHC radiation levels through irradiation with a cobalt-60 gamma source and a TCAD simulation von Asenov, P., Assiouras, P., Boziari, A., Filippou, K., Kazas, I., Kyriakis, A., Loukas, D., Morozzi, A., Moscatelli, F., Passeri, D.

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The effect of compact modelling strategy on SNM and Read Current variability in Modern SRAM von Asenov, P., Adamu-Lema, F., Roy, S., Millar, C., Asenov, A., Roy, G., Kovac, U., Reid, D.

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Fast calculation of capacitances in silicon sensors with 3D and 2D numerical solutions of the Laplace's equation and comparison with experimental data and TCAD simulations von Assiouras, P, Asenov, P, Kyriakis, A, Loukas, D

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