Severe Acute Myocarditis after the Third (Booster) Dose of mRNA COVID-19 Vaccination von Mengesha, Bethlehem, Asenov, Asen G, Hirsh-Raccah, Bruria, Amir, Offer, Pappo, Orit, Asleh, Rabea

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How I do it: modified lichtenberger-brown tracheoesophageal puncture procedure von Sapundzhiev, Nikolay R, Asenov, Asen G, Spasova, Blagovesta, Genova, Petya S, Davidov, Georgi I, Ivanova, Darina

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Abstract 12421: Assessment of Flow Measurements Using a Noninvasive Photoplethysmography-Based Device Compared to Invasive Pulmonary Artery Catheter von Nachman, Dean, Rahamim, Eldad, Ibrahimli, Mahsati, Asenov, Asen G, Goldstein, Nir, Kolben, Yotam, Huly, Segev, Ben Ishay, Arik, Fons, Meir, Merin, Roei, Eisenkraft, Arik, Amir, Offer, Asleh, Rabea

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Severe Acute Myocarditis after the Third (Booster) Dose of mRNA COVID-19 Vaccination von Mengesha, Bethlehem, Asenov, Asen G, Hirsh-Raccah, Bruria, Amir, Offer, Pappo, Orit, Asleh, Rabea

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Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs von Roy, G., Brown, A.R., Adamu-Lema, F., Roy, S., Asenov, A.

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METHOD FOR OBTAINING OF POROUS CELLULOS MATERIALS von PAVLOV, PAVEL G, BANDOVA,MARCHE C, SIMEONOV,NIKOLAJJ P, DIMOV,KIRIL D, ASENOV,ASEN G

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Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study von Xingsheng Wang, Brown, A. R., Idris, N., Markov, S., Roy, G., Asenov, A.

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Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using "Ab Initio" Ionized Impurity Scattering von Alexander, C., Roy, G., Asenov, A.

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Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs von Asenov, A., Brown, A.R., Davies, J.H., Kaya, S., Slavcheva, G.

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Simulation Study of Dominant Statistical Variability Sources in 32-nm High- \kappa/Metal Gate CMOS von Xingsheng Wang, Roy, G., Saxod, O., Bajolet, A., Juge, A., Asenov, A.

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Analysis of Threshold Voltage Distribution Due to Random Dopants: A 100 000-Sample 3-D Simulation Study von Reid, D., Millar, C., Roy, G., Roy, S., Asenov, A.

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Poly-Si-Gate-Related Variability in Decananometer MOSFETs With Conventional Architecture von Brown, A.R., Roy, G., Asenov, A.

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Towards Polyoxometalate-Cluster-Based Nano-Electronics von Vilà-Nadal, Laia, Mitchell, Scott G., Markov, Stanislav, Busche, Christoph, Georgiev, Vihar, Asenov, Asen, Cronin, Leroy

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BG44605 von LUKANOV,LJUDMIL K.,BG, VENKOV,ATANAS P.,BG, ASENOV,ASEN E.,BG, GEORGIEV,DELCHO A.,BG, MOLLOV,NIKOLA M.,BG

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Comparative Simulation Study of the Different Sources of Statistical Variability in Contemporary Floating-Gate Nonvolatile Memory von Roy, G., Ghetti, A., Benvenuti, A., Erlebach, A., Asenov, A.

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Accurate Statistical Description of Random Dopant-Induced Threshold Voltage Variability von Millar, C., Reid, D., Roy, G., Roy, S., Asenov, A.

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Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study von Asenov, A., Slavcheva, G., Brown, A.R., Davies, J.H., Saini, S.

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Microscopic KMC Modeling of Oxide RRAMs von Sadi, Toufik, Asenov, Asen

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Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs von Kalna, K., Seoane, N., Garcia-Loureiro, A.J., Thayne, I.G., Asenov, A.

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Impact of Individual Charged Gate-Oxide Defects on the Entire I- V Characteristic of Nanoscaled FETs von Franco, J., Kaczer, B., Toledano-Luque, M., Bukhori, M. F., Roussel, P. J., Grasser, T., Asenov, A., Groeseneken, G.

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