Effect of the implantation dose and annealing time on the luminescence properties of von Sobolev, N.A, Kalyadin, A.E, Aruev, P.N, Zabrodskii, V.V, Shek, E.I, Shtelmakh, K.F, Karabeshkin, K.V

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Cherenkov gamma-ray telescopes: Past, present, future. The ALEGRO project von Bykov, A. M., Aharonian, F. A., Krassilchtchikov, A. M., Kholupenko, E. E., Aruev, P. N., Baiko, D. A., Bogdanov, A. A., Vasilyev, G. I., Zabrodskii, V. V., Troitsky, S. V., Tuboltsev, Yu. V., Kozhberov, A. A., Levenfish, K. P., Chichagov, Yu. V.

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Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions von Sobolev, N. A., Kalyadin, A. E., Aruev, P. N., Zabrodskii, V. V., Shek, E. I., Shtel’makh, K. F., Karabeshkin, K. V.

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Si:Si LEDs with room-temperature dislocation-related luminescence von Sobolev, N. A., Kalyadin, A. E., Konovalov, M. V., Aruev, P. N., Zabrodskiy, V. V., Shek, E. I., Shtel’makh, K. F., Mikhaylov, A. N., Tetel’baum, D. I.

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ALEGRO: A new-generation Cherenkov gamma observatory von Kholupenko, E. E., Aruev, P. N., Baiko, D. A., Bogdanov, A. A., Vasilyev, G. I., Zabrodskii, V. V., Krasil’shchikov, A. M., Tuboltsev, Yu. V., Chichagov, Yu. V.

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Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties von Kalyadin, A. E., Sobolev, N. A., Strel’chuk, A. M., Aruev, P. N., Zabrodskiy, V. V., Shek, E. I.

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Electrical Characterization and Defect-Related Luminescence in Oxygen Implanted Silicon von Vyvenko, O.F., Vdovin, V.I., Aruev, P.N., Sobolev, N.A., Shek, E.I., Loshachenko, A.S., Danilov, D.V., Zabrodskiy, V.V.

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Electroluminescence properties of LEDs based on electron-irradiated p-Si von Sobolev, N. A., Shtel’makh, K. F., Kalyadin, A. E., Aruev, P. N., Zabrodskiy, V. V., Shek, E. I., Yang, D.

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Characterization of spatial homogeneity of sensitivity and radiation resistance of semiconductor detectors in the soft X-ray range von Aruev, P.N., Kolokolnikov, Yu.M., Kovalenko, N.V., Legkodymov, A.A., Lyakh, V.V., Nikolenko, A.D., Pindyurin, V.F., Sukhanov, V.L., Zabrodsky, V.V.

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Utilization of silicon detectors with “ideal-diode” current-voltage characteristics von Sukhanov, V. L., Aruev, P. N., Drozdova, M. V., Zabrodskaya, N. V., Zabrodskiy, V. V., Lazeeva, M. S., Filimonov, V. V., Sherstnev, E. V.

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Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon von Sobolev, N.A., Xiang, Lue Lue, Medvids, Artur, Aruev, P.N., Kalyadin, Anton E., Zabrodski, Vladimir, Loshachenko, A.S., Shek, Elena I., Vdovin, V.I., Yang, De Ren, Shtel'makh, K.F.

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Photoresponse recovery in silicon photodiodes upon VUV irradiation von Zabrodskiy, V. V., Aruev, P. N., Belik, V. P., Ber, B. Ya, Kazantsev, D. Yu, Drozdova, M. V., Zabrodskaya, N. V., Lazeeva, M. S., Nikolenko, A. D., Sukhanov, V. L., Filimonov, V. V., Sherstnev, E. V.

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