Silicon Light-Emitting Diodes with Dislocation-Related Luminescence Fabricated with Participation of Oxygen Precipitates von Sobolev, N. A., Kalyadin, A. E., Shtel’makh, K. F., Aruev, P. N., Zabrodskiy, V. V., Shek, E. I.

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Temperature Dependence of Dislocation-Related Electroluminescence in Silicon Light-Emitting Diodes Containing Oxygen Precipitates von Sobolev, N. A., Kalyadin, A. E., Shtel’makh, K. F., Aruev, P. N., Zabrodskiy, V. V., Shek, E. I.

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Plasma Electron Temperature Measurement by Foil Soft-X-Ray Spectrometer Installed on TUMAN-3M and Globus-M2 Tokamaks von Voronin, A. V., Goryainov, V. Yu, Zabrodsky, V. V., Sherstnev, E. V., Kornev, V. A., Aruev, P. N., Kurskiev, G. S., Zhubr, N. A., Tukachinsky, A. S.

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Silicon Light-Emitting Diodes with Luminescence from (113) Defects von Kalyadin, A. E., Shtel’makh, K. F., Aruev, P. N., Zabrodskii, V. V., Karabeshkin, K. V., Shek, E. I., Sobolev, N. A.

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Quantum Yield of a Silicon Avalanche Photodiode in the Wavelength Range of 120–170 nm von Aruev, P. N., Belik, V. P., Zabrodskii, V. V., Kruglov, E. M., Nikolaev, A. V., Sakharov, V. I., Serenkov, I. T., Filimonov, V. V., Sherstnev, E. V.

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Detector for Detection of Electrons with an Energy of 5–30 keV for the “Troitsk Nu-Mass” Setup von Aruev, P. N., Berlev, A. I., Zabrodskii, V. V., Zadorozhnyi, S. V., Nikolaev, A. V., Titov, N. A., Sherstnev, E. V.

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Quantum Yield of an Avalanche Silicon Photodiode in the 114–170 and 210–1100 nm Wavelength Ranges von Aruev, P. N., Belik, V. P., Blokhin, A. A., Zabrodskii, V. V., Nikolaev, A. V., Sakharov, V. I., Serenkov, I. T., Filimonov, V. V., Sherstnev, E. V.

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The Architecture of a 32 × 32 Hybrid Matrix Format High-Speed Detector for Spectral Range Vacuum Ultraviolet–Hard X-Rays von Aruev, P. N., Bobashev, S. V., Krassilchtchikov, A. M., Nikolaev, A. V., Petrov, D. Yu, Sherstnev, E. V.

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Quantum Yield of a Silicon XUV Avalanche Photodiode in the 320–1100 nm Wavelength Range von Zabrodskii, V. V., Aruev, P. N., Ber, B. Ya, Kazantsev, D. Yu, Gorokhov, A. N., Nikolaev, A. V., Filimonov, V. V., Shvarts, M. Z., Sherstnev, E. V.

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Characteristics of a Silicon Avalanche Photodiode for the Near-IR Spectral Range von Aruev, P. N., Ber, B. Ya, Gorokhov, A. N., Zabrodskii, V. V., Kazantsev, D. Yu, Nikolaev, A. V., Filimonov, V. V., Shvarts, M. Z., Sherstnev, E. V.

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Detection of UV Radiation from Extensive Air Showers: Prospects for Cherenkov Gamma-Ray Astronomy von Kholupenko, E. E., Bykov, A. M., Aharonyan, F. A., Vasiliev, G. I., Krassilchtchikov, A. M., Aruev, P. N., Zabrodskii, V. V., Nikolaev, A. V.

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Cherenkov gamma-ray telescopes: Past, present, future. The ALEGRO project von Bykov, A. M., Aharonian, F. A., Krassilchtchikov, A. M., Kholupenko, E. E., Aruev, P. N., Baiko, D. A., Bogdanov, A. A., Vasilyev, G. I., Zabrodskii, V. V., Troitsky, S. V., Tuboltsev, Yu. V., Kozhberov, A. A., Levenfish, K. P., Chichagov, Yu. V.

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Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions von Sobolev, N. A., Kalyadin, A. E., Aruev, P. N., Zabrodskii, V. V., Shek, E. I., Shtel’makh, K. F., Karabeshkin, K. V.

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ALEGRO: A new-generation Cherenkov gamma observatory von Kholupenko, E. E., Aruev, P. N., Baiko, D. A., Bogdanov, A. A., Vasilyev, G. I., Zabrodskii, V. V., Krasil’shchikov, A. M., Tuboltsev, Yu. V., Chichagov, Yu. V.

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Electrical Characterization and Defect-Related Luminescence in Oxygen Implanted Silicon von Sobolev, N.A., Aruev, P.N., Zabrodskiy, V.V., Danilov, D.V., Vdovin, V.I., Vyvenko, O.F., Shek, E.I., Loshachenko, A.S.

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Investigation of the plasma radiation power in the Globus-M tokamak by means of SPD silicon photodiodes von Iblyaminova, A. D., Avdeeva, G. F., Aruev, P. N., Bakharev, N. N., Gusev, V. K., Zabrodsky, V. V., Kurskiev, G. S., Minaev, V. B., Miroshnikov, I. V., Patrov, M. I., Petrov, Yu. V., Sakharov, N. V., Tolstyakov, S. Yu, Shchegolev, P. B.

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Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range von Aruev, P N, Barysheva, Mariya M, Ber, B Ya, Zabrodskaya, N V, Zabrodskii, V V, Lopatin, A Ya, Pestov, Alexey E, Petrenko, M V, Polkovnikov, V N, Salashchenko, Nikolai N, Sukhanov, V L, Chkhalo, Nikolai I

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Structural and luminescent properties of electron-irradiated silicon von Sobolev, N A, Aruev, P N, Kalyadin, A E, Shek, E I, Zabrodskiy, V V, Loshachenko, A S, Shtel`makh K F, Vdovin, V I, Luelue, Xiang, Yang, Deren

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Investigating the radiation hardness of semiconductor detectors toward synchrotron radiation in the EUV range (near 13.6 nm) von Nikolenko, A. D., Aruev, P. N., Zabrodsky, V. V., Zavertkin, P. S., Ivlyushkin, D. V., Mashkovetsev, M. R., Pindyurin, V. F., Soldatov, A. E.

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The Architecture of a 32 x 32 Hybrid Matrix Format High-Speed Detector for Spectral Range Vacuum Ultraviolet-Hard X-Rays von Aruev, P. N., Bobashev, S. V., Krassilchtchikov, A. M., Nikolaev, A. V., Petrov, D. Yu, Sherstnev, E. V.

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